Wei Du

Associate Professor

University of Arkansas

United States

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About

Wei Du is an Associate Professor at the University of Arkansas, USA. His research focuses on advanced materials for photonics and infrared detection, with recent publications covering topics such as the growth of GeSn using ultra-high vacuum chemical vapor deposition and the development of monolithic Germanium–Tin avalanche photodiodes. He has also contributed to the understanding of growth dynamics in chemical vapor deposition processes and the development of Si3N4 waveguides for photonic integration.

Articles (19)

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2025

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2025

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2025

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2024

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2022

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2021

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2021

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2021

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2021

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2021

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2020

Collaborators (4)

Shuiqing Yu

Professor

University of Arkansas

UNITED STATES

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Greg Sun

Professor and Founding Chair

University of Massachusetts Boston

UNITED STATES

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Bahareh Marzban

ETH Zurich

SWITZERLAND

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Jeremy Witzens

Professor

RWTH Aachen University

GERMANY

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Wei Du

Research Interests

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About

Articles (19)

Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K

X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping

In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]

Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection

Editorial: SiGeSn Infrared Photonics and Quantum Electronics

Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications

Effects of ion implantation with arsenic and boron in germanium-tin layers

Investigation of the cap layer for improved GeSn multiple quantum well laser performance

Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications

Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

Numerical Study of Graphene/Au/SiC Waveguide-Based Surface Plasmon Resonance Sensor

Impact of nonlinear effects in Si towards integrated microwave-photonic applications

Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics

Electrically injected GeSn lasers on Si operating up to 100 K

Collaborators (4)

Shuiqing Yu

Greg Sun

Bahareh Marzban

Jeremy Witzens

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