Werner Wegscheider

Full professor

ETH Zürich

Switzerland

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Werner Wegscheider is a Full Professor at ETH Zurich, Switzerland. His research focuses on quantum transport, charge transfer dynamics, and emergent phenomena in low-dimensional semiconductor systems, as evidenced by his recent articles. Notably, his work explores magnetocapacitance in quantum wells, fractional quantum Hall effects, and innovative measurement techniques in electronic devices.

Articles (15)

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2025

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2025

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2025

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2023

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2023

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2023

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2023

Collaborators (11)

Lorenzo Graziotto

ETH Zürich

SWITZERLAND

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Københavns Universitet

DENMARK

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Wolfgang Belzig

Professor

University of Konstanz

GERMANY

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Fabrizio Nichele

Part Time Associate Professor

Eindhoven University of Technology

NETHERLANDS

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Thomas Ihn

ETH Zürich

SWITZERLAND

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Rolf Haug

Leibniz University Hannover

GERMANY

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Werner Wegscheider

Research Interests

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Articles (15)

Charge transfer dynamics in an electron-hole bilayer device: capacitance oscillations and hysteretic behavior

Magnetocapacitance signatures of electrons and holes in InAs/GaSb quantum wells separated by an AlSb barrier

Simultaneous measurement of charge carrier density, mobility, and their transients with four electrical contacts: Frequency-multiplexed Hall effect method

Tunable vacuum-field control of fractional and integer quantum Hall phases

Memory resistor based on GaAs 2D-bilayers

Quantum transport in InSb quantum well devices: progress and perspective

Testing the Renormalization of the von Klitzing Constant by Cavity Vacuum Fields

Non-equilibrium excited-state fractionally quantized Hall effects observed via current bias spectroscopy

Quantum Hall effect in InAsSb quantum wells at elevated temperatures

Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction

Influence of the electron density on the giant negative magnetoresistance in two-dimensional electron gases

Spin-selective strong light–matter coupling in a 2D hole gas-microcavity system

Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet—Andreev states

Strongly interacting two-dimensional electron systems: Evidence for enhanced one-dimensional edge-channel coupling

Josephson-like Tunnel Resonance and Large Coulomb Drag in GaAs-Based Electron-Hole Bilayers

Collaborators (11)

Lorenzo Graziotto

Erik Cheah

Can Aygen

Mohammad Hafezi

Daniel G. Suarez-Forero

U. Kushan Wijewardena

Filip Krizek

Wolfgang Belzig

Fabrizio Nichele

Thomas Ihn

Rolf Haug

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