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Xiao Tang

Academic , Lecturer

University of Bristol

United Kingdom

Research Interests

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Professors in United Kingdom

Articles (20)

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2026

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2024

Collaborators (3)

Kuang-Hui Li

Assistant Professor

National Sun Yat-Sen University

TAIWAN

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Ying Wu

Associate Professor

King Abdullah University of Science and Technology

SAUDI ARABIA

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Thomas D. Anthopoulos

Professor

The University of Manchester

UNITED KINGDOM

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Xiao Tang

Research Interests

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Articles (20)

Impact of high-temperature Ohmic contact annealing process on AlN Schottky barrier diodes

Engineering High-Quality Crack-Free AlN on Si(111) by a Hybrid 3D/2D Growth Mode in MOCVD

Two Kelvin Operation of Ultrawide-Bandgap β-Ga2O3 FinFETs and Logic Inverter Integrated Circuits

Unipolar β-Ga2O3 Pseudo-junction barrier Schottky diodes via Low-Cost magnesium diffusion process

Alleviate sidewall damage of InGaN green micro-LEDs by atomic layer etching

High-performance UV polarization sensitive photodetector for a graphene (2D)/GaN (3D) junction with a non-centrosymmetric electric field

NiOx gate oxide for enhanced thermal stability of threshold voltage in GaN MIS-HEMTs up to 400 °C

2.3-μm deep UV micro-LEDs fabricated by self-aligned selective thermal oxidation process

Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching

Performance Enhancement of n-Type AIN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

κ/β-Ga 2O 3 Type-II Phase Heterojunction

In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor

Bandgap-Tunable Aluminum Gallium Oxide Deep-UV Photodetector Prepared by RF Sputter and Thermal Interdiffusion Alloying Method

Monolithic Integrated Micro-thin Film Thermocouples for On-Chip Temperature Measurement of GaN HEMTs

Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm2 V−1 s−1) and low thermal budget (200 °C)

High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

Toward crack-free AlN growth on silicon (111) by introducing boron incorporated buffer layer via MOCVD

Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire

Pseudo-source gated beta-gallium oxide MOSFET

Collaborators (3)

Kuang-Hui Li

Ying Wu

Thomas D. Anthopoulos

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