Yijin Zhang

Assistant professor

University of Tokyo

Japan

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Articles (14)

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2024

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2022

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2022

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2022

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2022

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2021

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2020

Collaborators (8)

Ryosuke Senga

National Institute of Advanced Industrial Science and Technology

JAPAN

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Akiko Ueda

National Institute of Advanced Industrial Science and Technology

JAPAN

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Kohei Aso

Japan Advanced Institute of Science and Technology

JAPAN

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Satoru Masubuchi

Associate Professor

University of Tokyo

JAPAN

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Masato Sakano

The University of Electro-Communications

JAPAN

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Kyoko Ishizaka

Professor

University of Tokyo

JAPAN

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Tomoki Machida

University of Tokyo

JAPAN

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Yoshifumi Oshima

Professor

Japan Advanced Institute of Science and Technology

JAPAN

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Yijin Zhang

Research Interests

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Articles (14)

Cavity-enhanced photo-thermoelectric response in graphene under cyclotron resonance

Minigap-induced negative differential resistance in multilayer MoS2 -based tunnel junctions

Crossover between rigid and reconstructed moiré lattice in h-BN-encapsulated twisted bilayer WSe2 with different twist angles

Symmetry Engineering in Twisted Bilayer WTe<sub>2</sub>

Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe2

All-dry flip-over stacking of van der Waals junctions of 2D materials using polyvinyl chloride

Evaluation of polyvinyl chloride adhesion to 2D crystal flakes

Resonant Tunneling between Quantized Subbands in van der Waals Double Quantum Well Structure Based on Few-Layer WSe<sub>2</sub>

Defect-assisted tunneling spectroscopy of electronic band structure in twisted bilayer graphene/hexagonal boron nitride moiré superlattices

Subband-resolved momentum-conserved resonant tunneling in monolayer graphene/<i>h</i>-BN/ABA-trilayer graphene small-twist-angle tunneling device

In situ Raman spectroscopy across superconducting transition of liquid-gated MoS2

Switchable out-of-plane shift current in ferroelectric two-dimensional material CuInP2S6

Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction

Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors

Collaborators (8)

Ryosuke Senga

Akiko Ueda

Kohei Aso

Satoru Masubuchi

Masato Sakano

Kyoko Ishizaka

Tomoki Machida

Yoshifumi Oshima

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