Yongzhao YAO

Professor

Mie university

Japan

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Professor Yongzhao Yao is a faculty member at Mie University in Japan. His research primarily focuses on the mechanical and electrical properties of semiconductor materials, particularly β-Ga2O3 and GaN. Recent publications explore dislocation characterization, anisotropic mechanical properties, and the performance of AlGaN/AlN heterostructures in field-effect transistors.

Articles (10)

Year:

2024

Year:

2023

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2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Collaborators (1)

Keiichi Hirano

Associate Professor

High Energy Accelerator Research Organization

JAPAN

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Yongzhao YAO

Research Interests

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Articles (10)

Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns

Lattice misorientation at domain boundaries in β‐Ga2O3 single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography

Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors

Relationship Between Propagation Angle of Dislocations in β-Ga2O3 (001) Bulk Wafers and Their Etch Pit Shapes

Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs

Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes

3D calculation studies of dislocation density in a β-Ga2O3 crystal grown by vertical Bridgman method

X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias

Collaborators (1)

Keiichi Hirano

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