Yordan M. Georgiev

Head of Nanofabrication

Helmholtz-Zentrum Dresden-Rossendorf

Germany

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Yordan M. Georgiev is the Head of Nanofabrication at Helmholtz-Zentrum Dresden-Rossendorf in Germany. His research interests include advanced materials and nanotechnology, focusing on light-matter interaction in transition metal dichalcogenides (TMDs), quantum confinement effects in MOSFETs, and the fabrication and characterization of novel nanostructures. Recent publications address topics such as the development of infrared photodetectors and the engineering of germanium-tin alloys using techniques such as pulsed laser melting.

Articles (12)

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2025

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2025

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2024

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2023

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2022

Collaborators (4)

Sean Smith

Professor (Applied Mathematics) and Director (NCI)

Australian National University

AUSTRALIA

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Nikolay Petkov

Lecturer

Munster Technological University Cork

IRELAND

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Marcin Turek

Maria Curie-Skłodowska University

POLAND

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Thomas Mikolajick

Technische Universität Dresden

GERMANY

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Yordan M. Georgiev

Research Interests

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Articles (12)

Enhanced light–matter interaction and photodetection in TMDs using distributed Bragg reflectors (DBRs)

Observation of room-temperature gate-tunable quantum confinement effect in a photodoped junctionless MOSFET

Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopy

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

Significant Resistance Reduction in Modulation‐Doped Silicon Nanowires via Aluminum‐Induced Acceptor States in SiO<sub>2</sub>

Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting

Atomic layer etching of nanowires using conventional reactive ion etching tool

Effect of a Discontinuous Ag Layer on Optical and Electrical Properties of ZnO/Ag/ZnOStructures

Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Effect of a Discontinuous Ag Layer on Optical and Electrical Properties of ZnO/Ag/ZnOStructures

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Collaborators (4)

Sean Smith

Nikolay Petkov

Marcin Turek

Thomas Mikolajick

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