Yoshiyuki Egami

Assistant Professor

Hokkaido University

Japan

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Yoshiyuki Egami is an Assistant Professor at Hokkaido University, Japan. His research focuses on first-principles studies related to semiconductor structures and anisotropy, particularly in 4H-SiC and quantum wells. Recent publications include investigations into electron transport simulations and the effects of barrier compositions on spin-relaxation rates.

Articles (4)

Year:

2021

Year:

2021

Year:

2021

Year:

2020

Collaborators (2)

Hiroshi Akera

JAPAN

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Tomoya Ono

Professor

Kobe University

JAPAN

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Yoshiyuki Egami

Research Interests

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About

Articles (4)

First-Principles Study on Structure and Anisotropy of High N-atom Density Layer in 4H-SiC

First-Principles Study on Structure and Anisotropy of High N-atom Density Layer in 4H-SiC

Calculation of the Green's function in the scattering region for first-principles electron-transport simulations

Suppressing effective magnetic field and spin-relaxation rate by tuning barrier compositions in a (111) quantum well

Collaborators (2)

Hiroshi Akera

Tomoya Ono

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