Yukari Ishikawa

Chief Researcher

Japan Fine Ceramics Center

Japan

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Yukari Ishikawa is a Chief Researcher at the Japan Fine Ceramics Center in Japan. Her research areas encompass crystallographic defects in single crystals, etch pit formation and its correlation with dislocations, as well as advanced imaging techniques for analyzing dislocations in wide bandgap semiconductors. Recent articles authored by her include studies on β-Ga 2 O 3 and GaN, utilizing various synchrotron X-ray topography methods.

Articles (10)

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2022

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2022

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2022

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2022

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2022

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2022

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2022

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2022

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2021

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2021

Collaborators (3)

Kazuyuki Tadatomo

JAPAN

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Hirotaka Yamaguchi

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Keiichi Hirano

Associate Professor

High Energy Accelerator Research Organization

JAPAN

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Yukari Ishikawa

Research Interests

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Articles (10)

A synchrotron X-ray topography study of crystallographic defects in ScAlMgO4 single crystals

Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography

Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN

Etch pit formation on β-Ga<sub>2</sub>O<sub>3</sub> by molten KOH+NaOH and hot H<sub>3</sub>PO<sub>4</sub> and their correlation with dislocations

Large-area total-thickness imaging and Burgers vector analysis of dislocations in β -Ga<sub>2</sub>O<sub>3</sub>using bright-field x-ray topography based on anomalous transmission

Mechanism of molten KOH+NaOH etching of GaN revealed by the slopes of etch pits formed at threading dislocations

Observation of threading dislocations with a c + m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM

Three-dimensional curving of crystal planes in wide bandgap semiconductor wafers visualized using a laboratory X-ray diffractometer

Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth

Visualization of the curving of crystal planes in β-Ga2O3 by X-ray topography

Collaborators (3)

Kazuyuki Tadatomo

Hirotaka Yamaguchi

Keiichi Hirano

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Yukari Ishikawa

Research Interests

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About

Articles (10)

A synchrotron X-ray topography study of crystallographic defects in ScAlMgO4 single crystals

Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography

Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN

Etch pit formation on β-Ga<sub>2</sub>O<sub>3</sub> by molten KOH+NaOH and hot H<sub>3</sub>PO<sub>4</sub> and their correlation with dislocations

Large-area total-thickness imaging and Burgers vector analysis of dislocations in β -Ga<sub>2</sub>O<sub>3</sub>using bright-field x-ray topography based on anomalous transmission

Mechanism of molten KOH+NaOH etching of GaN revealed by the slopes of etch pits formed at threading dislocations

Observation of threading dislocations with a c + m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM

Three-dimensional curving of crystal planes in wide bandgap semiconductor wafers visualized using a laboratory X-ray diffractometer

Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth

Visualization of the curving of crystal planes in β-Ga2O3 by X-ray topography

Collaborators (3)

Kazuyuki Tadatomo

Hirotaka Yamaguchi

Keiichi Hirano

Make your next move.

Observation of threading dislocations with a c + m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM