A F M Anhar Uddin Bhuiyan

Assistant Professor

University of Massachusetts Lowell

United States

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Articles (14)

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2024

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2024

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2023

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2022

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2022

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2022

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2022

Collaborators (6)

Steven A. Ringel

UNITED STATES

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Hongping Zhao

Professor

Ohio State University

UNITED STATES

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Hsien-Chih Huang

University of Illinois at Urbana-Champaign

UNITED STATES

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Jinwoo Hwang

UNITED STATES

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Baishakhi Mazumder

University at Buffalo

UNITED STATES

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Ping Wang

University of Michigan

UNITED STATES

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A F M Anhar Uddin Bhuiyan

Research Interests

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Articles (14)

High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes

(Invited) Development of Single Crystal Nbn Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing

Temperature dependent characteristics of β -Ga2O3 FinFETs by MacEtch

Tutorial: Metalorganic chemical vapor deposition of β -Ga2O3 thin films, alloys, and heterostructures

The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy

Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices

MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) YSZ substrates

Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates

Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage

In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films

Collaborators (6)

Steven A. Ringel

Hongping Zhao

Hsien-Chih Huang

Jinwoo Hwang

Baishakhi Mazumder

Ping Wang

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