Hongping Zhao

Professor

Ohio State University

United States

Research Interests

Explore related searches

Professors in United States

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Professor Hongping Zhao is a faculty member at The Ohio State University in the United States. His research encompasses areas such as metalorganic chemical vapor deposition (MOCVD) and the characterization of wide bandgap semiconductor materials. Recent articles co-authored by him investigate deep level defects in β-(AlxGa1−x)2O3 and methods to optimize MOCVD processes for various semiconductor thin films.

Articles (30)

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Collaborators (8)

Kathleen Kash

Professor

Case Western Reserve University

UNITED STATES

View details

A F M Anhar Uddin Bhuiyan

Assistant Professor

University of Massachusetts Lowell

UNITED STATES

View details

Aaron R. Arehart

UNITED STATES

View details

Hsien-Chih Huang

University of Illinois at Urbana-Champaign

UNITED STATES

View details

Ronald Schrimpf

Professor

Vanderbilt University

UNITED STATES

View details

Jinwoo Hwang

UNITED STATES

View details

Baishakhi Mazumder

University at Buffalo

UNITED STATES

View details

Ping Wang

University of Michigan

UNITED STATES

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Hongping Zhao

Research Interests

Explore related searches

Contact this professor

About

Articles (30)

Electric field-induced carrier recovery and thermal stability of radiation-induced defects in β-Ga2O3

Metal–Organic Chemical Vapor Deposition of MgSiN2 Thin Films

Deep level defects in MOCVD-grown β-(AlxGa1−x)2O3

Metalorganic chemical vapor deposition in situ etching of β-Ga2O3 and β-(AlxGa1−x)2O3

Optimizing Metal‐Organic Chemical Vapor Deposition for Ultrawide Bandgap MgSiN2 Thin‐Films

Metalorganic chemical vapor deposition epitaxy of β-Ga2O3 films on (001) Ga2O3 substrates with fast growth rates

Mist Chemical Vapor Deposition of Ultrawide Bandgap p‐LiGa5O8 on AlN and Determination of the Band Offsets at the LiGa5O8/AlN Interface

Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs

E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers

Experimental analysis of potential origin of p-type conductivity in LiGa5O8

Thin channel Ga2O3 MOSFET with 55 GHz fMAX and &gt;100 V breakdown

High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes

MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates

Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2

Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium

Temperature dependent characteristics of β -Ga2O3 FinFETs by MacEtch

Tutorial: Metalorganic chemical vapor deposition of β -Ga2O3 thin films, alloys, and heterostructures

The role of carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes

Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8

Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy

Collaborators (8)

Kathleen Kash

A F M Anhar Uddin Bhuiyan

Aaron R. Arehart

Hsien-Chih Huang

Ronald Schrimpf

Jinwoo Hwang

Baishakhi Mazumder

Ping Wang

Make your next move.

Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown