Adrian Ionescu

Professor

École Polytechnique Fédérale de Lausanne

Switzerland

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Adrian Ionescu is a Professor at École Polytechnique Fédérale de Lausanne, Switzerland. His research areas encompass advanced materials for electronics, including phase-change films, biomarker profiling for diagnostics, and nanoscale semiconductors. Recent articles highlight his work on integrating ferroelectric materials and enhancing the performance of carbon nanotube supercapacitors, contributing significantly to the fields of neuromorphic devices and quantum dot technology.

Articles (16)

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2025

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2025

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2025

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2024

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2021

Collaborators (1)

Igor Stolichnov

EPFL (École Polytechnique Fédérale de Lausanne)

SWITZERLAND

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Adrian Ionescu

Research Interests

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About

Articles (16)

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

Bridging Blood and Skin: Biomarker Profiling in Dermal Interstitial Fluid (dISF) for Minimally Invasive Diagnostics

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

Graphene-enhanced ferroelectric domain wall high-output memristor

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage

Boosting the Performance of on-Chip Vertically-Aligned Carbon Nanotube Supercapacitors Via Solvent-Free Radiofrequency Nitrogen Plasma Treatment

Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Collaborators (1)

Igor Stolichnov

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