Igor Stolichnov

EPFL (École Polytechnique Fédérale de Lausanne)

Switzerland

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Professors in Switzerland

Articles (16)

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2025

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2025

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2025

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2024

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2020

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2020

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2020

Collaborators (1)

Adrian Ionescu

Professor

École Polytechnique Fédérale de Lausanne

SWITZERLAND

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Igor Stolichnov

Research Interests

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Articles (16)

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

Position-Sensitive Domain-by-Domain Switchable Ferroelectric Memristor

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

Graphene-enhanced ferroelectric domain wall high-output memristor

Atomic-Scale Characterization of 180° Conductive Domain Walls in PbZr0.1Ti0.9O3

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Negative Capacitance in HfO<sub>2</sub> Gate Stack Structures With and Without Metal Interlayer

Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures

Erratum: Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization (IEEE Transactions on Electron Devices (2020) 67:1 (377–382) DOI: 10.1109/TED.2019.2954585)

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Radio-Frequency Characteristics of Ge-Doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization

Collaborators (1)

Adrian Ionescu

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