Ageeth Bol

Professor

University of Michigan

United States

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Articles (14)

Year:

2024

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2022

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2021

Collaborators (14)

Laurens Siebbeles

Professor

Delft University of Technology

NETHERLANDS

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Steven J. Koester

UNITED STATES

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Adriaan Mackus

Assistant Professor

Eindhoven University of Technology

NETHERLANDS

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Sanne Deijkers

Eindhoven University of Technology

NETHERLANDS

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Jeff Schulpen

Eindhoven University of Technology

NETHERLANDS

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Bart Macco

NETHERLANDS

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Marcel Verheijen

NETHERLANDS

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Miika Mattinen

University of Helsinki

FINLAND

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Emiel J. M. Hensen

Eindhoven University of Technology

NETHERLANDS

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Sachin Kinge

Technology Head

Toyota Motor Europe

BELGIUM

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Sachin Kinge

Visiting Industry Professor

Delft University of Technology

NETHERLANDS

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Ailbe Ó Manacháin

Senior Staff Scientist, Fellow, Lecturer and HE Lead PI

University College Cork

IRELAND

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Wilhelmus M. M. Erwin Kessels

Eindhoven University of Technology

NETHERLANDS

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Paul Hurley

IRELAND

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Ageeth Bol

Research Interests

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Articles (14)

Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Structural Aspects of MoSx Prepared by Atomic Layer Deposition for Hydrogen Evolution Reaction

Influence of High-κ Dielectrics Integration on ALD-Based MoS2 Field-Effect Transistor Performance

Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C

MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier

Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films

ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistors

Controlling transition metal atomic ordering in two-dimensional Mo1- xW xS2alloys

Effects of the Structure and Temperature on the Nature of Excitons in the Mo0.6W0.4S2Alloy

Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfide

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Thickness and Morphology Dependent Electrical Properties of ALD‐Synthesized MoS2 FETs

On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Collaborators (14)

Laurens Siebbeles

Steven J. Koester

Adriaan Mackus

Sanne Deijkers

Jeff Schulpen

Bart Macco

Marcel Verheijen

Miika Mattinen

Emiel J. M. Hensen

Sachin Kinge

Sachin Kinge

Ailbe Ó Manacháin

Wilhelmus M. M. Erwin Kessels

Paul Hurley

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