Adriaan Mackus

Assistant Professor

Eindhoven University of Technology

Netherlands

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About

Dr. Adriaan Mackus is an Assistant Professor at Technische Universiteit Eindhoven, Netherlands. His research primarily focuses on atomic layer deposition and etching processes, with recent articles exploring area-selective atomic layer deposition and computational investigations of precursor interactions. His work contributes significantly to the advancement of nanotechnology and materials science.

Articles (15)

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2025

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2022

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Miika Mattinen

University of Helsinki

FINLAND

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Ageeth Bol

Professor

University of Michigan

UNITED STATES

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Erik Lemmen

Eindhoven University of Technology

NETHERLANDS

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Wilhelmus M. M. Erwin Kessels

Eindhoven University of Technology

NETHERLANDS

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Adriaan Mackus

Research Interests

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Articles (15)

Topographically selective atomic layer deposition within trenches enabled by an amorphous carbon inhibition layer

Investigation of the atomic layer etching mechanism for Al2O3 using hexafluoroacetylacetone and H2 plasma

Area-Selective Atomic Layer Deposition through Selective Passivation of SiO2 with a SF6/H2 Plasma

The Consequences of Random Sequential Adsorption for the Precursor Packing and Growth-Per-Cycle of Atomic Layer Deposition Processes

Atomic layer deposition of transition metal chalcogenide TaSx using Ta[N(CH3)2]3[NC(CH3)3] precursor and H2S plasma

MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier

Computational Investigation of Precursor Blocking during Area-Selective Atomic Layer Deposition Using Aniline as a Small-Molecule Inhibitor

Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3

Equivalent electric circuit model of accurate ion energy control with tailored waveform biasing

Packing of inhibitor molecules during area-selective atomic layer deposition studied using random sequential adsorption simulations

Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of Nanodevices

Foundations of atomic-level plasma processing in nanoelectronics

Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

Surface Chemistry during Atomic Layer Deposition of Pt Studied with Vibrational Sum-Frequency Generation

Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

Collaborators (11)

Harm C. M. Knoops

Sanne Deijkers

Sumit Agarwal

Jeff Schulpen

Bas Vermulst

İlker Tezsevin

Marcel Verheijen

Miika Mattinen

Ageeth Bol

Erik Lemmen

Wilhelmus M. M. Erwin Kessels

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