Alexei Gruverman

Charles Bessey Professor of Physics

University of Nebraska - Lincoln

United States

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Alexei Gruverman is the Charles Bessey Professor of Physics at the University of Nebraska-Lincoln, USA. His research focuses on ferroelectric materials and their properties, including photostriction, electroresistance, and domain dynamics. Recent publications include studies on BiFeO3 and its ferroelectricity, as well as the effects of heat treatments on switching behavior in AlScN capacitors.

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Collaborators (10)

Xiaoshan Xu

Professor

University of Nebraska - Lincoln

UNITED STATES

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Wilman tsai

ADjunct Professor, Exec Director

Stanford University

UNITED STATES

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Morgan Trassin

Professor

ETH Zürich

SWITZERLAND

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Alexander Sinitskii

Professor

University of Nebraska - Lincoln

UNITED STATES

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Haidong Lu

University of Nebraska - Lincoln

UNITED STATES

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Marty Gregg

Professor

The Queen's University Belfast

UNITED KINGDOM

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Alexey Lipatov

Assistant Professor

South Dakota School of Mines and Technology

UNITED STATES

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Amit Kumar

Lecturer

The Queen's University Belfast

UNITED KINGDOM

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Yu Yun

Assistant Research Professor

Drexel University

UNITED STATES

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Haoze Zhang

Flinders University

AUSTRALIA

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Alexei Gruverman

Research Interests

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About

Articles (20)

Giant Photostriction and Optically Modulated Ferroelectricity in BiFeO3

Optomechanical tuning of electroresistance in 2D ferroelectric α-In2Se3

Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors

Reversible control over the distribution of chemical inhomogeneities in multiferroic BiFeO3

A 2D hybrid perovskite ferroelectric with switchable polarization and photoelectric robustness down to monolayer

Conducting Domain Walls in van der Waals Ferroelectric NbOI2

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects

Dual Mechanism for Transient Capacitance Anomaly in Improper Ferroelectrics

Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors

Domain Dynamics and Resistive Switching in Ferroelectric Al1–xScxN Thin Film Capacitors

Enhanced Photoresponse in Few-Layer SnS2 Field-Effect Transistors Modified with Methylammonium Lead Iodide Perovskite

High-yield fabrication of electromechanical devices based on suspended Ti3C2Tx MXene monolayers

Domain wall saddle point morphology in ferroelectric triglycine sulfate

Electromechanics of Domain Walls in Uniaxial Ferroelectrics

Mechanical Stress Modulation of Resistance in MoS2 Junctions

Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors

Piezoelectricity in hafnia

Voltage controlled Néel vector rotation in zero magnetic field

Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions

Tip-induced domain protrusion in ferroelectric films with in-plane polarization

Collaborators (10)

Xiaoshan Xu

Wilman tsai

Morgan Trassin

Alexander Sinitskii

Haidong Lu

Marty Gregg

Alexey Lipatov

Amit Kumar

Yu Yun

Haoze Zhang

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