Wilman tsai

ADjunct Professor, Exec Director

Stanford University

United States

Research Interests

Explore related searches

Professors in United States

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Wilman Tsai is an Adjunct Professor and Executive Director at Stanford University, USA. His research focuses on advanced materials and applications in energy-efficient AI, including spin-torque technology and ferroelectric properties. He has published several articles on topics such as STT-assisted SOT-MRAM, atomic layer deposition, and the characterization of ultrathin tunnel barriers.

Articles (10)

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2022

Collaborators (3)

Paul McIntyre

Professor/Rick and Melinda Reed Professor of Engineering

Stanford University

UNITED STATES

View details

Alexei Gruverman

Charles Bessey Professor of Physics

University of Nebraska - Lincoln

UNITED STATES

View details

Eric Pop

Professor

Stanford University

UNITED STATES

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Wilman tsai

Research Interests

Explore related searches

Contact this professor

About

Articles (10)

High-Density STT-Assisted SOT-MRAM (SAS-MRAM) for Energy-Efficient AI Applications

On-Device Continual Learning With STT-Assisted-SOT MRAM-Based In-Memory Computing

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects

Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors

Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line

Thermal Characterization of Ultrathin MgO Tunnel Barriers

Enhanced spin-torque efficiency by metal insertion in the Pt/Co/MgO system

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors

Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering

Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia–Zirconia Alloys

Collaborators (3)

Paul McIntyre

Alexei Gruverman

Eric Pop

Make your next move.