Andrzej Wysmołek

Professor

faculty of physics university of warsaw warsaw poland

Poland

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Professor Andrzej Wysmołek is a faculty member at the University of Warsaw Faculty of Physics in Poland. His research areas include the study of boron nitride and its applications in semiconductor processing, with a focus on defect characterization, strain modulation, and the development of novel heterostructures. Recent publications highlight his work on large-area growth techniques, luminescence studies, and the manipulation of structural defects in two-dimensional materials.

Articles (22)

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2025

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2021

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2021

Collaborators (26)

Johannes Binder

University of Warsaw

POLAND

Andrzej Wysmołek

Research Interests

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About

Articles (22)

Mitigation of delamination of epitaxial large-area boron nitride for semiconductor processing

Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: luminescence and positron annihilation studies

Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials

All-BN distributed Bragg reflectors fabricated in a single MOCVD process

Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides

Electrostatically-induced strain of graphene on GaN nanorods

Erratum to: Influence of structural defects on charge density waves in 1T-TaS2 (Nano Research, (2023), 16, 8, (11528-11539), 10.1007/s12274-023-5876-7)

Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes

Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

Large-Area Growth of High-Optical-Quality MoSe<sub>2</sub>/hBN Heterostructures with Tunable Charge Carrier Concentration

Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination

Effective substrate for the growth of multilayer h-BN on sapphire—substrate off-cut, pre-growth, and post-growth conditions in metal-organic vapor phase epitaxy

Epitaxial Hexagonal Boron Nitride for Hydrogen Generation by Radiolysis of Interfacial Water

Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

Direction-sensitive graphene flow sensor

Electron paramagnetic resonance of VN–VGa complex in BGaN

Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering

Enhancement of graphene-related and substrate-related Raman modes through dielectric layer deposition

Empirical indication for desalinating properties of porous boron nitride

Raman Optical Activity of 1T-TaS<sub>2</sub>

Stable Field Electron Emission and Plasma Illumination from Boron and Nitrogen Co‐Doped Edge‐Rich Diamond‐Enhanced Carbon Nanowalls

Photoluminescence as a probe of phosphorene properties

Collaborators (26)

Johannes Binder

Aneta Drabińska

Slawomir Kret

Sebastian Zlotnik

Maciej Molas

Zbigniew Zytkiewicz

Igor Prozheev

Adrianna Wójcik

Jakub Jagiełło

Piotr Kossacki

STRACHOWSKI Tomasz

Wojciech Pacuski

Michal Piskorski

Krzysztof Korona

Aleksandra Przewloka

Ken Haenen

Adam Babinski

Tymoteusz Ciuk

Jakub Iwański

Anna Reszka

Roman Stepniewski

Maciej Rogala

Filip Tuomisto

Paweł J. Kowalczyk

Tatiana Korona

Mateusz Tokarczyk

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