Benoit Bakeroot

Researcher/Professor

Ghent University

Belgium

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Dr. Benoit Bakeroot is a Professor at Ghent University in Belgium. His research focuses on the advancement of gallium nitride (GaN) high-electron-mobility transistors (HEMTs), including studies on gate stability, electrical modeling, and doping profile engineering. His recent publications address various aspects of p-GaN gate technologies and their applications in high-power electronics.

Articles (20)

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2024

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2020

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2020

Collaborators (4)

Frank Altmann

Department head

Fraunhofer Institute for Microstructure of Materials and Systems

GERMANY

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Stefaan Decoutere

BELGIUM

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Matthew Smith

Trainer, Researcher

University of Bristol

UNITED KINGDOM

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Guido Groeseneken

Part-time Professor

KU Leuven

BELGIUM

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Benoit Bakeroot

Research Interests

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About

Articles (20)

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering

Monolithic 650-V dual-gate p-GaN bidirectional switch

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>−</sup>n Diodes: The Road to Reliable Vertical MOSFETs

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs

Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

Reliability of p-GaN Gate HEMTs in Reverse Conduction

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Collaborators (4)

Frank Altmann

Stefaan Decoutere

Matthew Smith

Guido Groeseneken

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