Bertrand Vilquin

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Associate-professor

Ecole Centrale de Lyon

France

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Recent Grants

Grant: Close

NanOx4EStor

Open Date: 2022-06-01

Close Date: 2025-06-01

Grant: Close

Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Open Date: 2018-01-01

Close Date: 2021-06-30

Grant: Close

レーザーアプレーション法による新規強誘電体薄膜材料の創成

Open Date: 2003-01-01

Close Date: 2004-12-31

Grant: Close

Modifications of the chemical and electronic ferroelectric surface structure under water adsorption

Open Date:

Close Date:

Grant: Close

Monolithic INtegration of functional Oxides on Silicon for novel micro-system devices – MINOS

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Articles (12)

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2022

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2021

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2021

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2021

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2021

Collaborators (8)

Laura Bégon-Lours

ETH Zürich

SWITZERLAND

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Matthieu Bugnet

CNRS

FRANCE

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Jacob Jones

Professor

North Carolina State University

UNITED STATES

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Martine LE BERRE

Assistant Professor (Mcf HdR)

Institut National des Sciences Appliquées de Lyon

FRANCE

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Lane W. Martin

UNITED STATES

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Damien Deleruyelle

Full Professor

Institut des nanotechnologies de Lyon

FRANCE

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Sang-Wook Cheong

Professor

Rutgers University

UNITED STATES

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José P. B. Silva

University of Minho

PORTUGAL

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Bertrand Vilquin

Research Interests

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Contact this professor

Recent Grants

Articles (12)

Comparative performance of fluorite-structured materials for nanosupercapacitor applications

Quantification of Crystalline Phases in Hf0.5Zr0.5O2 Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr0.2Ti0.8O3Films Assisted by Nanocavities

Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer

First principles study on the lattice thermal conductivity of α-phase Ga2O3

Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge?

Strain dependence of dissociative adsorption of H2O on epitaxially strained, out-of-plane polarized, BaTiO3(001) thin films

Effect of strain and stoichiometry on the ferroelectric and pyroelectric properties of the epitaxial Pb(Zr<inf>0.2</inf>Ti<inf>0.8</inf>)O<inf>3</inf> films deposited on Si wafers

Collaborators (8)

Laura Bégon-Lours

Matthieu Bugnet

Jacob Jones

Martine LE BERRE

Lane W. Martin

Damien Deleruyelle

Sang-Wook Cheong

José P. B. Silva

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