Damien Deleruyelle

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Full Professor

Institut des nanotechnologies de Lyon

France

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About

Damien Deleruyelle is a Full Professor at the Institut des Nanotechnologies de Lyon, France. His research primarily focuses on advanced ferroelectric materials and their applications in electronic devices, especially in relation to memory technologies and nanosupercapacitors. Recent publications include work on ambipolar Schottky-based ferroelectric transistors, as well as computational modeling techniques for ferroelectric domain formation and electric switching mechanisms.

Recent Grants

Grant: Close

REsistive Memories on FLEXible substrates – REFLEX

Open Date: 2011-12-20

Close Date: 2014-12-19

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Collaborators (6)

Matthieu Bugnet

CNRS

FRANCE

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Martine LE BERRE

Assistant Professor (Mcf HdR)

Institut National des Sciences Appliquées de Lyon

FRANCE

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Prabir Mahato

Hutchinson SA Centre for Research & Innovation

FRANCE

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Sebastien Pruvost

Professeur

Institut National des Sciences Appliquées de Lyon

FRANCE

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Silviu Colis

Professor (full)

University of Strasbourg

FRANCE

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Bertrand Vilquin

Associate-professor

Ecole Centrale de Lyon

FRANCE

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Damien Deleruyelle

Research Interests

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About

Recent Grants

Articles (20)

Oxygen vacancy effects on polarization switching of ferroelectric Bi2FeCrO6 thin films

Comparative performance of fluorite-structured materials for nanosupercapacitor applications

Phase‐Field Study of Nanocavity‐Assisted Mechanical Switching in PbTiO3 Thin Films

Ultrafast and accurate prediction of polycrystalline hafnium oxide phase-field ferroelectric hysteresis using graph neural networks

On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices

A numerical analysis of the short open load calibration robustness for capacitance measurements in scanning microwave microscopy

Transfer learning for accelerating phase-field modeling of ferroelectric domain formation in large-scale 3D systems

Machine learning surrogate for 3D phase-field modeling of ferroelectric tip-induced electrical switching

Ultrafast and accurate prediction of polycrystalline hafnium oxide phase-field ferroelectric hysteresis using graph neural networks

3-D Logic Circuit Design-Oriented Electrothermal Modeling of Vertical Junctionless Nanowire FETs

Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer

Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction

1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing

High temperature stability embedded ReRAM for 2x nm node and beyond

Water-soluble polyethylene-oxide polymer based memristive devices

Water-soluble polyethylene-oxide polymer based memristive devices

1S1R Optimization for High-Frequency Inference on Binarized Spiking Neural Networks

Elucidating Postprogramming Relaxation in Multilevel Cell-Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data

Ferroelectricity Improvement in Ultra-Thin Hf 0.5 Zr 0.5 O 2 Capacitors by the Insertion of a Ti Interfacial Layer

Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction

Collaborators (6)

Matthieu Bugnet

Martine LE BERRE

Prabir Mahato

Sebastien Pruvost

Silviu Colis

Bertrand Vilquin

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