Christoph Jungemann

RWTH Aachen University

Germany

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Articles (18)

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2025

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2020

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2020

Collaborators (4)

John Cressler

Professor

Georgia Tech

UNITED STATES

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Michael Schröter

Technische Universität Dresden

GERMANY

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Xiaodi Jin

Technische Universität Dresden

GERMANY

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Fanqi Meng

Goethe University Frankfurt

GERMANY

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Christoph Jungemann

Research Interests

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Articles (18)

Revisiting the Vertical Superjunction in SiGe HBT Performance Optimization

Thermodynamically consistent stabilization of the drift-diffusion model for arbitrary band structures and carrier statistics

Analysis of Multivalley Phenomena in InP/GaAsSb DHBTs Using the Boltzmann Transport Equation

Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures

A Godunov-type stabilization scheme for the Boltzmann transport equation of III-V devices with a 3D k-space

Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part II: Application and Results

Massively parallel FDTD-FBMC simulations of nonlinear hole dynamics in silicon at cryogenic temperatures driven by intense EM THz pulses

Investigation of the Large Variability of HfO<sub>2</sub>‐Based Resistive Random Access Memory Devices with a Small Current Compliance by a Kinetic Monte Carlo Model

Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization

Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part I: Simulation Tools and Application to Sample Structures

Importance of valence-band anharmonicity and carrier distribution for third- and fifth-harmonic generation in Si:B pumped with intense terahertz pulses

Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress

Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation

Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures

Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors

Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations

Studying the switching variability in redox-based resistive switching devices

Collaborators (4)

John Cressler

Michael Schröter

Xiaodi Jin

Fanqi Meng

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