John Cressler

Professor

Georgia Tech

United States

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John Cressler is a Professor at Georgia Tech in the United States. His research encompasses high-frequency analog circuits, RF performance in CMOS devices, and advanced microscale technologies for communications. He has published extensively on topics including power amplifiers, integrated antennas, and the optimization of silicon-germanium transistors.

Articles (29)

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2022

Collaborators (6)

Christoph Jungemann

RWTH Aachen University

GERMANY

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Omeed Momeni

University of California, Davis

UNITED STATES

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Amirreza Alizadeh

UNITED STATES

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Adrian Ildefonso

Assistant Professor

Indiana University Bloomington

UNITED STATES

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Garam Kim

Myongji University

SOUTH KOREA

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Wenshan Cai

Professor

Georgia Institute of Technology

UNITED STATES

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John Cressler

Research Interests

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About

Articles (29)

Mitigation of single-event transients in high-frequency analog circuits using choke inductors

RF Performance and TID Hardness Tradeoffs in Annular 45-nm RF SOI CMOS Devices

A 2.2–82-GHz Ultrabroadband Wilkinson Power Divider Using a Multisection Folded Inductor in 130-nm SiGe BiCMOS

A Comprehensive Analysis of Bandwidth and Size for Four-Types of Series-Combined Transformer-Based Doherty Output Networks: Theory and Examples

Novel Low-Loss Shielded Interconnects for D-Band/Sub-THz Applications Using Microscale Metal Printing Technologies

Performance and Reliability Tradeoffs of Power Amplifier Cells Using High-Performance and Medium Breakdown SiGe HBTs

Revisiting the Vertical Superjunction in SiGe HBT Performance Optimization

D-Band Active Transmission Line With 33-GHz Bandwidth and 13-dB Gain at f max/2

Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA

How to Consider SEEs When Designing a SiGe Low-Noise Amplifier—An Overview

A W-Band Stacked Frequency Quadrupler With a Dual-Driven Core Achieving 10.3% Drain Efficiency

Analysis of Optical Single-Event Transients in Integrated Silicon Photonics Mach–Zehnder Modulators for Space-Based Optical Communications

Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

SET-Induced Dropout and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs

What It Takes to Be a Great Mentor [Educator’s Desk]

A 50-GHz SiGe Frequency Quadrupler With 42-dBc Harmonic Rejection and 17% Peak Total Efficiency

Wideband, High Efficiency On-Chip Monolithic Integrated Antenna at W-Band Using Miniaturized Cavity and Through Silicon Via

Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors

Direct Measurement of Total-Ionizing-Dose-Induced Phase Shifts in Commercially Available, Integrated Silicon-Photonic Waveguides

A 117–155-GHz SiGe HBT D-Band Subharmonic Mixer Utilizing a Novel 180° Hybrid Coupler

Silicon Earth: A Historical Perspective on the Invention/Discovery of the Transistor

A High-Efficiency W-Band Frequency Quadrupler With Current-Reusing Stacked Push–Push Stages

Impact of Device Layout on Thermal Parameters and RF Performance of 90-nm SiGe HBTs

5-GHz Injection-Locked Delay Cell with 10–25 ns Adjustable Group-Delay in SiGe BiCMOS

A 110–145-GHz SiGe HBT D-Band Vector Modulator Phase Shifter Utilizing Differential Quadrature Delay Lines

A SiGe HBT D-Band LNA Utilizing Asymmetric Broadside Coupled Lines

The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

A D-Band Reflective-Type Phase Shifter Using a SiGe PIN Diode Resonant Load

Collaborators (6)

Christoph Jungemann

Omeed Momeni

Amirreza Alizadeh

Adrian Ildefonso

Garam Kim

Wenshan Cai

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