Daniel ALQUIER

Professor

Université de Tours

France

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Professor Daniel Alquier is a faculty member at Université de Tours in France. His research focuses on advanced semiconductor devices, particularly in the modeling and optimization of Gallium Nitride (GaN) and Silicon Carbide (SiC) technologies. Recent publications include studies on edge termination techniques for p-n diodes, contact resistance, and leakage current mechanisms in GaN devices. He is also exploring the electrical characteristics of novel materials and their applications in power electronics.

Articles (15)

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2025

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2025

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2024

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2022

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2021

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2021

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2021

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2020

Collaborators (7)

Stephen Saddow

University of South Florida

UNITED STATES

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Yvon Cordier

FRANCE

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jean-francois michaud

Associate Professor

Université de Tours

FRANCE

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Matthew Charles

FRANCE

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Jean-Michel Chauveau

Professeur

Université Paris-Saclay

FRANCE

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Salvatore Tudisco

Istituto Nazionale di Fisica Nucleare

ITALY

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Haiyan Ou

Technical University of Denmark

DENMARK

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Daniel ALQUIER

Research Interests

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About

Articles (15)

Analysis of Edge Termination Techniques for Gallium Nitride Pseudo-Vertical p-n Diodes: Modeling Based on Technology Computer-Aided Design and Review of Current Developments

Modeling and Extraction of the Specific Contact Resistance of GaN p-i-n Diodes up to 40 GHz

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC

Emerging SiC Applications beyond Power Electronic Devices

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Integrating porous silicon layer backing to capacitive micromachined ultrasonic transducers (CMUT)-based linear arrays for acoustic Lamb wave attenuation

Assessing the electrical activity of individual ZnO nanowires thermally annealed in air

Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing

Gas discrimination by simultaneous sound velocity and attenuation measurements using uncoated capacitive micromachined ultrasonic transducers

Influence of topology and diode characteristics of AC-DC converters for low power piezoelectric energy harvesting

Fabrication of Piezoelectric ZnO Nanowires Energy Harvester on Flexible Substrate Coated with Various Seed Layer Structures

Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing

Editorial for the special Issue on SiC based miniaturized devices

Collaborators (7)

Stephen Saddow

Yvon Cordier

jean-francois michaud

Matthew Charles

Jean-Michel Chauveau

Salvatore Tudisco

Haiyan Ou

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