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Haiyan Ou

Technical University of Denmark

Denmark

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Research Interests

Materials Chemistry

50%

Hardware Engineering

40%

Semiconductor Physics

90%

Photonic

80%

Photodetector Technology

50%

Optical Engineering

50%

Silicon Carbide

50%

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Articles16

Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications

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Year:

2024

Strong third-order nonlinearity in amorphous silicon carbide waveguides

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Year:

2024

4H–SiC microring resonators—Opportunities for nonlinear integrated optics

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Year:

2024

Experimental Observation of Raman Assisted and Kerr Optical Frequency Comb in a 4H-Silicon-Carbide on Insulator Microresonator

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Year:

2024

Hybridly Packaged White Light Emitting Diode Composed of Fluorescent SiC and Nitride-Based Near-Ultraviolet Light Emitting Diode

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Year:

2024

Emerging SiC Applications beyond Power Electronic Devices

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Year:

2023

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

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Year:

2023

High-performance silicon carbide polarization beam splitting based on an asymmetric directional couplers for mode conversion

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Year:

2023

Novel Photonic Applications of Silicon Carbide

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Year:

2023

Spectral Tuning, Stabilities under External Exposures, and Spontaneous Enhancement of Emission Intensity in Grown-into-Glass All-Inorganic Metal Halide Perovskite Nanocrystals

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Year:

2023

Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform

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Year:

2023

Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications

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Year:

2022

Efficient and Broadband Trident Spot-size Convertor for Thin-Film Lithium Niobate Integrated Device

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Year:

2022

Exceptional points at bound states in the continuum in photonic integrated circuits

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Year:

2022

High-performance polarization-independent beam splitters and MZI in silicon carbide integrated platforms for single-photon manipulation

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Year:

2022

Improved passivation depth of porous fluorescent 6H-SiC with Si/C faces using atomic layer deposition

Article Link

Year:

2022

Collaborators12

Martijn Wubs

Technical University of Denmark

DENMARK

Peter Wellmann

GERMANY

Sanshui Xiao

Technical University of Denmark

DENMARK

Yiyu Ou

Associate Professor

Technical University of Denmark

DENMARK

Motoaki Iwaya

JAPAN

Karsten Rottwitt

Professor

Technical University of Denmark

DENMARK

Stephen Saddow

University of South Florida

UNITED STATES

Didier Chaussende

Université Grenoble Alpes

FRANCE

Xiaodong Shi

Technical University of Denmark

DENMARK

Yaoqin Lu

Technical University of Denmark

DENMARK

Salvatore Tudisco

Istituto Nazionale di Fisica Nucleare

ITALY

Daniel ALQUIER

Professor

Université de Tours

FRANCE

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