Daniel Splith

Leipzig University

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Articles (15)

Collaborators (9)

Michael Sebastian Bar

Leipzig University

Marius Grundmann

Leipzig University

Harald Krautscheid

Leipzig University

Anna Hassa

Leipzig University

Piero Mazzolini

Paul-Drude-Institut fur Festkorperelektronik

H. von Wenckstern

Leipzig University

Philipp Storm

Leipzig University

Johannes Feldl

Paul-Drude-Institut fur Festkorperelektronik

Yang Chen

Leipzig University

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Daniel Splith

Research Interests

Explore related searches

Contact this professor

Articles (15)

Collaborators (9)

Michael Sebastian Bar

Marius Grundmann

Harald Krautscheid

Anna Hassa

Piero Mazzolini

H. von Wenckstern

Philipp Storm

Johannes Feldl

Yang Chen

Make your next move.

Daniel Splith

Research Interests

Explore related searches

Contact this professor

Articles (15)

Influence of Cation Ratio and Oxygen Deposition Pressure on Optical and Electrical Transport Properties of Amorphous Copper Tin Oxide Thin Films

Ultrawide bandgap spinel γ-(Ga0.8Ge0.2)2O3 alloy semiconductor epitaxial thin films

Low-temperature buffer layer-assisted heteroepitaxial growth of γ-CuI thin films by pulsed laser deposition: Tailoring electrical properties

Lateral α-Ga2O3:Zr metal–semiconductor field effect transistors

Deconvolution of light- and heavy-hole contributions to measurements of the temperature-dependent Hall effect in zincblende copper iodide

Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices

Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

Masked-assisted radial-segmented target pulsed-laser deposition: A novel method for area-selective deposition using pulsed-laser deposition

Analysis of Electrical Transport Properties of Amorphous Oxide Semiconductors by an Extended Percolation-Based Random Band-Edge Model

Correction to: Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt

Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt

Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

Epitaxial Growth of κ‐(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition

Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range

SnO/β-Ga2O3 vertical pn heterojunction diodes

Collaborators (9)

Michael Sebastian Bar

Marius Grundmann

Harald Krautscheid

Anna Hassa

Piero Mazzolini

H. von Wenckstern

Philipp Storm

Johannes Feldl

Yang Chen

Make your next move.