Piero Mazzolini

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Paul-Drude-Institut fur Festkorperelektronik

Germany

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Recent Grants

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Understanding the crystallographic domains - electrical transport relationship in epsilon-Ga2O3 thin films: a step towards power electronic devices

Open Date: 2021-10-01

Close Date: 2022-10-01

Grant: Close

Point defects control in Ga2O3 thin films grown via molecular beam epitaxy

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Close Date:

Articles (18)

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2024

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2022

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2022

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2021

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2021

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2021

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2021

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2020

Collaborators (15)

Danilo Bersani

University of Parma

ITALY

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Martin Feneberg

Otto-von-Guericke Universität Magdeburg

GERMANY

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Antonella Parisini

Professor

University of Parma

ITALY

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Laura E. Ratcliff

Imperial College London

UNITED KINGDOM

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Yoshiyuki YAMASHITA

Professor

Kyushu University

JAPAN

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Markus R. Wagner

Technische Universität Berlin

GERMANY

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Tomohiro Matsushita

Professor

Nara Institute of Science and Technology（NAIST）

JAPAN

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Felix Nippert

Technische Universität Berlin

GERMANY

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Daniel Splith

Leipzig University

GERMANY

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Georg Hoffmann

Paul Drude Institute for Solid State Electronics

GERMANY

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Maura Pavesi

Professor

University of Parma

ITALY

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Andrea Ardenghi

Paul Drude Institute for Solid State Electronics

GERMANY

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Manfred Martin

GERMANY

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Roberto Fornari

Full professor

University of Parma

ITALY

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Johannes Feldl

Paul-Drude-Institut fur Festkorperelektronik

GERMANY

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Piero Mazzolini

Research Interests

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Contact this professor

Recent Grants

Articles (18)

Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption

Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)

Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films

Electronic structure and surface band bending of Sn-doped β−Ga2O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations

Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement

Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3

Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction

Disorder‐order transition in Ga2O3 and its solid solution with In2O3 upon thermal annealing

Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3

Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry

Tackling Disorder in γ‐Ga2O3

Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga2O3

Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy

Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains

Isotopic study of Raman active phonon modes in β-Ga2O3

Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor

SnO/β-Ga2O3 vertical pn heterojunction diodes

Collaborators (15)

Danilo Bersani

Martin Feneberg

Antonella Parisini

Laura E. Ratcliff

Yoshiyuki YAMASHITA

Markus R. Wagner

Tomohiro Matsushita

Felix Nippert

Daniel Splith

Georg Hoffmann

Maura Pavesi

Andrea Ardenghi

Manfred Martin

Roberto Fornari

Johannes Feldl

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