Dong-Soo Shin

Professor

Hanyang University ERICA

South Korea

Research Interests

Explore related searches

Professors in South Korea

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Dong-Soo Shin is a Professor at Hanyang University ERICA, South Korea. His research areas encompass semiconductor devices, particularly focusing on light-emitting diodes, micro-LEDs, and the analysis of carrier dynamics in GaN-based systems. Recent articles highlight his work on novel laser structures, temperature measurements in GaN, and the performance of high-density micro-LED arrays.

Articles (25)

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Collaborators (2)

Jong-In Shim

SOUTH KOREA

View details

Joon Seop Kwak

Professor

Korea Institute of Energy Technology (KENTECH)

SOUTH KOREA

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Dong-Soo Shin

Research Interests

Explore related searches

Contact this professor

About

Articles (25)

Enhanced size-dependent efficiency of InGaN/AlGaN near-ultraviolet micro-LEDs

Heater-Tuned Single-Grating Distributed Bragg Reflector Lasers With a Thermal Confinement Waveguide Structure

Understanding carrier dynamics in GaN-based blue light-emitting diodes by self-consistent analysis of current, voltage, internal quantum efficiency, and forward capacitance

High-efficiency ZOGAN blue micro-LEDs with superior thermal-stress reliability for ultra-high-resolution displays

Impact of the Surface Leakage Current on the Internal-Quantum-Efficiency Measurement of Light-Emitting Diodes by the Room-Temperature Reference-Point Method

Temperature measurements of metal-free GaN using a thermoreflectance-based approach depending on excitation wavelength

Temperature dependence of the piezoelectric field in GaInN/GaN quantum wells and its impact on the device performance

A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

Origin of the High Forward Voltage and Low Voltage Efficiency of GaN-Based Light-Emitting Diodes at Cryogenic Temperatures

Temperature-Induced Stress Performance of High-Density GaN Micro-LED Arrays for Industrial Mass Production

GaAs-based red micro-light-emitting diodes with an oxide perimeter region for improved external quantum efficiency

Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers

Understanding and evaluating the mean photon energy and the external quantum efficiency of light‐emitting diodes

Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra

Temperature-Dependent Efficiency Droop in GaN-Based Blue Micro Light-Emitting Diodes

Extracting the inherent ideality factor of a diode from electrical current–voltage characteristics

Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga<sub>0.70</sub>In<sub>0.30</sub>N/GaN quantum wells

Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures

Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress

Theoretical studies on in-plane polarization characteristics of (11$$\bar{2}$$0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates

Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency

Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency

Analysis of Transient Degradation Behaviors of Organic Light-Emitting Diodes under Electrical Stress

Measuring the surface temperature of light-emitting diodes by thermoreflectance

Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase

Collaborators (2)

Jong-In Shim

Joon Seop Kwak

Make your next move.