Joon Seop Kwak

Professor

Korea Institute of Energy Technology (KENTECH)

South Korea

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Joon Seop Kwak is a Professor at the Korea Institute of Energy Technology (KENTECH) in South Korea. His research areas include the characterization and modeling of GaN-based light-emitting devices, efficiency enhancements in micro-LEDs, and the impacts of temperature and material defects on device performance. Recent articles authored by Professor Kwak explore advancements in AlGaN/GaN HEMTs and InGaN/AlGaN micro-LED technology, contributing significantly to the field of optoelectronics.

Articles (12)

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2025

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2025

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2024

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2023

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2023

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2022

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2022

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2021

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2020

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2020

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2020

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2020

Collaborators (2)

Jung Han

Professor

Yale University

UNITED STATES

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Dong-Soo Shin

Professor

Hanyang University ERICA

SOUTH KOREA

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Joon Seop Kwak

Research Interests

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Articles (12)

Characterization of hotspot formation in AlGaN/GaN HEMTs by probing Raman scattering through an optically transparent gate

Enhanced size-dependent efficiency of InGaN/AlGaN near-ultraviolet micro-LEDs

Accurate Modeling for Small-Signal Response Analysis in GaInN/GaN-Based Micro-Light-Emitting Devices

Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra

Temperature-Dependent Efficiency Droop in GaN-Based Blue Micro Light-Emitting Diodes

Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress

Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector

Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light-emitting diode arrays

Improvement of Ti/Al ohmic contacts on N-face n-type GaN by using O2 plasma treatment

Collaborators (2)

Jung Han

Dong-Soo Shin

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