Eiji Higurashi

Professor

Tohoku University

Japan

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Professor Eiji Higurashi is a faculty member at Tohoku University in Japan. His research focuses on low-temperature bonding techniques, wafer bonding processes, and integration technologies for electronic devices, demonstrated through recent articles on various bonding methods and applications. He has contributed significantly to the fields of materials science and electronics through innovative approaches to bonding and integration.

Articles (16)

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2025

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2025

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2025

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2025

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2024

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2022

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2022

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2021

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2020

Collaborators (6)

Tadatomo Suga

Professor

Meisei University

JAPAN

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Masanori Hayase

Professor

University of Tokyo

JAPAN

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Hitoshi Umezawa

National Institute of Advanced Industrial Science and Technology

JAPAN

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Yuichi Kurashima

National Institute of Advanced Industrial Science and Technology

JAPAN

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Thu H. H. Le

National Institute of Advanced Industrial Science and Technology

JAPAN

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Toshiro Hiramoto

Professor

University of Tokyo

JAPAN

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Eiji Higurashi

Research Interests

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Articles (16)

Au hollow pyramidal bumps for low-temperature low-pressure bonding fabricated via Au film transfer method

Low pressure Au–Au bonding using flat-topped micro-bump Au arrays fabricated by Au film transfer and coining methods

Wafer Bonding of GaAs and SiC via Thin Au Film at Room Temperature

Room temperature bonding of Au plating through surface smoothing using polyimide template stripping

Room temperature wafer bonding through conversion of polysilazane into SiO <sub>2</sub>

Pixel-Parallel Three-Layer Stacked CMOS Image Sensors Using Double-Sided Hybrid Bonding of SOI Wafers

Room temperature bonding of Au assisted by self-assembled monolayer

Heterogeneous Integration Technology Using Low-Temperature Bonding and Its Application to Electronic Devices,低温接合を用いた異種材料集積技術と電子デバイス応用

Wafer-Scale Room-Temperature Bonding of Smooth Au/Ti-Based Getter Layer for Vacuum Packaging

An Ultra-Compact MEMS Pirani Sensor for In-Situ Pressure Distribution Monitoring

Room temperature bonding of GaN and diamond substrates via atomic layer

Hydrophilic direct bonding of GaN and Si substrates by wet treatments using H2SO4/H2O2 mixture and NH3/H2O2 mixture

Simple and low-temperature vacuum packaging process by using Au/Ta/Ti metal multilayer

Bonding formation and gas absorption using Au/Pt/Ti layers for vacuum packaging

Low-temperature direct bonding of SiC and Ga2O3 substrates under atmospheric conditions

Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning

Collaborators (6)

Tadatomo Suga

Masanori Hayase

Hitoshi Umezawa

Yuichi Kurashima

Thu H. H. Le

Toshiro Hiramoto

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