Elisa Maddalena Sala

Research Fellow and Head of MOVPE

The University of Sheffield - The Edge

United Kingdom

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Dr. Elisa Maddalena Sala is a Research Fellow and Head of MOVPE at The University of Sheffield - The Edge in the United Kingdom. Her research focuses on quantum photonic applications, including the study of InAs quantum dots, droplet epitaxy, and the effects of thermal annealing on quantum dot structures. She has contributed to significant advancements in the field through her recent publications on various aspects of quantum dot technology and its applications in telecommunications.

Articles (10)

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2025

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2025

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2025

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2024

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2024

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2024

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2023

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2022

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2021

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2021

Collaborators (6)

Benoit Jack Eloi Guilhabert

University Of Strathclyde

UNITED KINGDOM

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raja sekhar reddy gajjela

ASML (Netherlands)

NETHERLANDS

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Petr Steindl

Leiden University

NETHERLANDS

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A. Mark Fox

University of Sheffield

UNITED KINGDOM

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Luke Wilson

UNITED KINGDOM

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Michael Strain

Professor at University of Strathclyde

University Of Strathclyde

UNITED KINGDOM

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Elisa Maddalena Sala

Research Interests

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Articles (10)

Micro-transfer printing of InGaAs/InP avalanche photodiode on Si substrate

An atomically resolved study of droplet epitaxy InAs quantum dots grown on InGa(As,P)/InP by MOVPE for quantum photonic applications

Effects of rapid thermal annealing on telecom C-band InAs quantum dots on InP (100) grown by droplet epitaxy

Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity

Local Droplet Etching with Indium Droplets on InP(100) by Metal–Organic Vapor Phase Epitaxy

Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications

Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)

Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

Collaborators (6)

Benoit Jack Eloi Guilhabert

raja sekhar reddy gajjela

Petr Steindl

A. Mark Fox

Luke Wilson

Michael Strain

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