Fabian Thome

Germany

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Articles (17)

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2025

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2024

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2024

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2024

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2024

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2024

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2023

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2022

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2022

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2022

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2022

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2021

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2021

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2021

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2021

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2020

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2020

Collaborators (4)

Farid Medjdoub

CNRS

FRANCE

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Akanksha Bhutani

Karlsruhe Institute of Technology

GERMANY

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Sebastian Krause

Fraunhofer Institute for Applied Solid State Physics

GERMANY

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Rüdiger Quay

Full Professor

University of Freiburg

GERMANY

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Fabian Thome

Research Interests

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Articles (17)

Unified Scalable Model for HEMT-Based Planar Schottky Diodes

A > 120-GHz Bandwidth, > 20-dBm P<sub>out</sub>, <6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology

Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology

Monolithically Integrated C-Band Low-Noise Amplifiers for Use in Cryogenic Large-Scale RF Systems

A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers

Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies

A 1–170-GHz Distributed Down-Converter MMIC in 35-nm Gate-Length InGaAs mHEMT Technology

A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology

A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures

A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology

First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates

Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes

Collaborators (4)

Farid Medjdoub

Akanksha Bhutani

Sebastian Krause

Rüdiger Quay

Make your next move.

Fabian Thome

Research Interests

Explore related searches

Contact this professor

Articles (17)

Unified Scalable Model for HEMT-Based Planar Schottky Diodes

A &gt; 120-GHz Bandwidth, &gt; 20-dBm P<sub>out</sub>, &lt;6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology

Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology

Monolithically Integrated C-Band Low-Noise Amplifiers for Use in Cryogenic Large-Scale RF Systems

A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers

Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies

A 1–170-GHz Distributed Down-Converter MMIC in 35-nm Gate-Length InGaAs mHEMT Technology

A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology

A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures

A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology

First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates

Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes

Collaborators (4)

Farid Medjdoub

Akanksha Bhutani

Sebastian Krause

Rüdiger Quay

Make your next move.

A > 120-GHz Bandwidth, > 20-dBm P<sub>out</sub>, <6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology