Rüdiger Quay

Full Professor

University of Freiburg

Germany

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Articles (19)

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2021

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2021

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2021

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2021

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2021

Collaborators (4)

Christian Molin

Fraunhofer-Institut für Keramische Technologien und Systeme

GERMANY

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Sylvia Gebhardt

Fraunhofer IKTS, Fraunhofer Institute for Ceramic Technologies and Systems

GERMANY

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Vittorio Camarchia

Associate Professor

Politecnico di Torino

ITALY

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Fabian Thome

GERMANY

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Rüdiger Quay

Research Interests

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Articles (19)

A > 120-GHz Bandwidth, > 20-dBm P<sub>out</sub>, <6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology

A 100-300 GHz Attenuator-Based Ultrawideband Vector Modulator

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC-DC Converters

2.6-and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Deposition

A 99.74% Efficient Capacitor-Charging Converter Using Partial Power Processing for Electrocalorics

A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond <i>f</i><sub>T</sub>

A 24 GHz Harmonic-Injection Doherty Power Amplifier with 42% PAE at 6 dB OPBO in 100 nm GaN Technology

A 63-73 GHz GaN Power Amplifier with a Compact Power Combiner

A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers With Low Channel Thickness

E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%

A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology

16-Way Ka-Band Power Combiner Using Novel Waveguide Transitions

Broadband 400 GHz On-Chip Antenna With a Metastructured Ground Plane and Dielectric Resonator

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs

Building Blocks for GaN Power Integration

Harmonic-Injection Class-E-M/F-n Power Amplifier With Finite DC-Feed Inductance and Isolation Circuit

Low-Power Differential Input to Single-Ended Output GaN RF-DAC for RF-Signal Generation

Collaborators (4)

Christian Molin

Sylvia Gebhardt

Vittorio Camarchia

Fabian Thome

Make your next move.

Rüdiger Quay

Research Interests

Explore related searches

Contact this professor

Articles (19)

A &gt; 120-GHz Bandwidth, &gt; 20-dBm P<sub>out</sub>, &lt;6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology

A 100-300 GHz Attenuator-Based Ultrawideband Vector Modulator

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC-DC Converters

2.6-and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Deposition

A 99.74% Efficient Capacitor-Charging Converter Using Partial Power Processing for Electrocalorics

A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond <i>f</i><sub>T</sub>

A 24 GHz Harmonic-Injection Doherty Power Amplifier with 42% PAE at 6 dB OPBO in 100 nm GaN Technology

A 63-73 GHz GaN Power Amplifier with a Compact Power Combiner

A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers With Low Channel Thickness

E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%

A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology

16-Way Ka-Band Power Combiner Using Novel Waveguide Transitions

Broadband 400 GHz On-Chip Antenna With a Metastructured Ground Plane and Dielectric Resonator

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs

Building Blocks for GaN Power Integration

Harmonic-Injection Class-E-M/F-n Power Amplifier With Finite DC-Feed Inductance and Isolation Circuit

Low-Power Differential Input to Single-Ended Output GaN RF-DAC for RF-Signal Generation

Collaborators (4)

Christian Molin

Sylvia Gebhardt

Vittorio Camarchia

Fabian Thome

Make your next move.

A > 120-GHz Bandwidth, > 20-dBm P<sub>out</sub>, <6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology