Fiacre Rougieux

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Senior Lecturer

University of New South Wales

Australia

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Grown-in defects in very pure silicon

Open Date: 2016-01-01

Close Date: 2018-12-31

Articles (14)

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2024

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2020

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UNSW Sydney

AUSTRALIA

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Fiacre Rougieux

Research Interests

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Contact this professor

Recent Grants

Articles (14)

Light-activated surface passivation for more efficient silicon heterojunction solar cells: Origin, physics and stability

Decarbonising mining of Australia's critical mineral deposits: Opportunities for sustainable mining through solar photovoltaics and wind energy integration

Reassessing iron–gallium recombination activity in silicon

Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing

On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors

Photoluminescence Spectroscopy of Thermal Donors and Oxygen Precipitates Formed in Czochralski Silicon at 450 °C

Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon

Electronic Properties of the Boron–Oxygen Defect Precursor of the Light-Induced Degradation in Silicon

The Mechanism of Surface Passivation Degradation in SiO2/SiNx Stack Under Light and Elevated Temperature

Photoconductance Determination of Carrier Capture Cross Sections of Slow Traps in Silicon Through Variable Pulse Filling

Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon

Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells

Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

Onset of ring defects in n-type Czochralski-grown silicon wafers

Collaborators (5)

AnYao Liu

Bram Hoex

Daniel Macdonald

Gianluca Coletti

Stephen Bremner

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