Geok Ing Ng

Professor

Nanyang Technological University (NTU)

Singapore

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About

Professor Geok Ing Ng is a faculty member at Nanyang Technological University in Singapore. His research areas include high-electron-mobility transistors (HEMTs), device performance optimization, and GaN-on-Si technology. Recent publications highlight advancements in AlN/GaN HEMTs and their applications in high-frequency and power amplifier technologies.

Articles (12)

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2025

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2025

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2025

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2024

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2024

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2024

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2021

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2020

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2020

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2020

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2020

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2020

Collaborators (2)

Xiao Gong

National University of Singapore (NUS)

SINGAPORE

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Hanchao Li

Nanyang Technological University

SINGAPORE

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Geok Ing Ng

Research Interests

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About

Articles (12)

Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique

Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures

Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability

AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets

GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures

CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson's figure-of-merit of 8.8 THz V

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

Low Static and Dynamic On-Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond

Collaborators (2)

Xiao Gong

Hanchao Li

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