Hanchao Li

Nanyang Technological University

Singapore

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Articles (9)

Year:

2025

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2025

Year:

2025

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2025

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2024

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2024

Year:

2024

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2024

Year:

2024

Collaborators (2)

Geok Ing Ng

Professor

Nanyang Technological University (NTU)

SINGAPORE

View details

Xiao Gong

National University of Singapore (NUS)

SINGAPORE

View details

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Hanchao Li

Research Interests

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Articles (9)

Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique

Multi-channel AlN/GaN Schottky barrier diodes

BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit

GaN-on-Si HEMT for D-Band Power Amplification Demonstrating 0.67 W/mm at 10 V

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability

First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding

AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets

Change of chemical bonding properties at SiN<sub>x</sub>/GaN/AlGaN interface with SiH<sub>4</sub> flow rate and its impact on the carrier transport properties of MIS-diodes

Collaborators (2)

Geok Ing Ng

Xiao Gong

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