Giovanni Verzellesi

University of Modena and Reggio Emilia

Italy

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Articles (11)

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2024

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2023

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2023

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2022

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2022

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2022

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2021

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2021

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2021

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2021

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2021

Collaborators (2)

Zhan Gao

Łukasiewicz Research Network - Institute of Microelectronics and Photonics

POLAND

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Alessandro CHINI

University of Modena and Reggio Emilia

ITALY

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Giovanni Verzellesi

Research Interests

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Articles (11)

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications

Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

Mechanisms Underlying the Bidirectional V T Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs

“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

Collaborators (2)

Zhan Gao

Alessandro CHINI

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