Zhan Gao

Łukasiewicz Research Network - Institute of Microelectronics and Photonics

Poland

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Articles (6)

Year:

2025

Year:

2025

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Collaborators (4)

Matteo Meneghini

University of Padova

ITALY

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Giovanni Verzellesi

University of Modena and Reggio Emilia

ITALY

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Oskar Artur Sadowski

Łukasiewicz Research Network - Institute of Electrical Engineering

POLAND

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Gaudenzio Meneghesso

Full Professor

University of Padua

ITALY

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Zhan Gao

Research Interests

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Articles (6)

Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs

Vertical GaN p–n Diodes with Ultralow Bevel Angle Mesa Termination Fabricated Using Photoresist Reflow and Single Cl2/BCl3/SF6 Etching Step

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications

Dynamic Behavior of Threshold Voltage and I D–V DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect

Collaborators (4)

Matteo Meneghini

Giovanni Verzellesi

Oskar Artur Sadowski

Gaudenzio Meneghesso

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