Gregory Burwell

Indoor photovoltaic (IPV) devices are poised to make a significant contribution to the proliferation of the “Internet of Things” (IoT). For the accurate intercomparison of IPVs (and, hence, to advance the rational development of the technology), lighting conditions representative of those in typical indoor settings must be created reproducibly. As indoor lighting is invariably broadband, this will typically require the use of optical attenuation to achieve varying irradiance conditions at the device under test location. However, most forms of optical attenuation will suffer from some degree of spectral dispersion, creating sources of uncertainty for key figures of merit, such as power conversion efficiency. In this work, we examine the contribution of the mode of optical attenuation to the accurate characterization of IPV systems. We discuss requirements for broadband light source attenuation for the accurate characterization of photovoltaic devices under indoor illumination and consider the importance of using suitable reference devices for light intensity calibration. Furthermore, we experimentally verify attenuation methods typically used, including power control of the light source itself, use of neutral density filters, and advanced attenuation based on tandem prism attenuators. Finally, spectral shape alteration-induced uncertainties in performance parameter determination of photovoltaic cells under indoor illumination are quantified for three common broadband light attenuation methods, where we found ∼2%, ∼6%, and up to ∼15% ambiguity in photovoltaic device efficiency when using LED power control, prism attenuators, and neutral density filter-based broadband light attenuation, respectively.

The effect of electron‐beam patterning on the water uptake and ionic conductivity of Nafion films using a combination of X‐ray photoelectron spectroscopy, quartz crystal microbalance studies, neutron reflectometry, and impedance spectroscopy is reported. The aim is to further characterize the nanoscale patterned Nafion structures recently used as a key element in novel ion‐to‐electron transducers by Gluschke et al. To enable this, the electron beam patterning process is developed for large areas, achieving patterning speeds approaching 1 cm 2 h −1 , and patterned areas as large as 7 cm 2 for the neutron reflectometry studies. It is ultimately shown that electron‐beam patterning affects both the water uptake and the ionic conductivity, depending on film thickness. Type‐II adsorption isotherm behavior is seen for all films. For thick films (≈230 nm), a strong reduction in water uptake with electron‐beam patterning is found. In contrast, for thin films (≈30 nm), electron‐beam patterning enhances water uptake. Notably, for either thickness, the reduction in ionic conductivity arising from electron‐beam patterning is kept to less than an order of magnitude. Mechanisms are proposed for the observed behavior based on the known complex morphology of Nafion films to motivate future studies of electron‐beam processed Nafion.

High‐quality, alumina thin films are extensively used as dielectrics, passivation layers, and barrier layers in electronics and many other applications. However, to achieve optimum stoichiometry and thus performance, the layers are often grown at elevated temperatures (>200 °C) using techniques such as atomic layer deposition (ALD). This is problematic for substrates or structures with low thermal budgets. Herein, alumina thin films are grown on 200 mm silicon substrates employing a versatile deposition method known as MVD at low deposition temperatures (35–150 °C). The chemical composition of the resulting films is investigated postdeposition using X‐ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry, with fully stoichiometric Al 2 O 3 achieved at deposition temperatures as low as 100 °C. Dielectric measurements confirm outstanding dielectric properties compared to typical thermal ALD layers deposited at much higher temperatures. This low‐temperature deposition performance by considering the MVD reactor design and the “pump‐type” regime of precursor delivery versus the “flow‐type” regime of ALD is rationalized and understood. The results clearly demonstrate that alumina thin films grown with MVD are highly versatile for electronic applications and are of particular relevance and interest for the high‐volume processing of dielectric, passivation, and barrier layers at low temperatures.