Paul Meredith

Indoor photovoltaic (IPV) devices are poised to make a significant contribution to the proliferation of the “Internet of Things” (IoT). For the accurate intercomparison of IPVs (and, hence, to advance the rational development of the technology), lighting conditions representative of those in typical indoor settings must be created reproducibly. As indoor lighting is invariably broadband, this will typically require the use of optical attenuation to achieve varying irradiance conditions at the device under test location. However, most forms of optical attenuation will suffer from some degree of spectral dispersion, creating sources of uncertainty for key figures of merit, such as power conversion efficiency. In this work, we examine the contribution of the mode of optical attenuation to the accurate characterization of IPV systems. We discuss requirements for broadband light source attenuation for the accurate characterization of photovoltaic devices under indoor illumination and consider the importance of using suitable reference devices for light intensity calibration. Furthermore, we experimentally verify attenuation methods typically used, including power control of the light source itself, use of neutral density filters, and advanced attenuation based on tandem prism attenuators. Finally, spectral shape alteration-induced uncertainties in performance parameter determination of photovoltaic cells under indoor illumination are quantified for three common broadband light attenuation methods, where we found ∼2%, ∼6%, and up to ∼15% ambiguity in photovoltaic device efficiency when using LED power control, prism attenuators, and neutral density filter-based broadband light attenuation, respectively.

High‐quality, alumina thin films are extensively used as dielectrics, passivation layers, and barrier layers in electronics and many other applications. However, to achieve optimum stoichiometry and thus performance, the layers are often grown at elevated temperatures (>200 °C) using techniques such as atomic layer deposition (ALD). This is problematic for substrates or structures with low thermal budgets. Herein, alumina thin films are grown on 200 mm silicon substrates employing a versatile deposition method known as MVD at low deposition temperatures (35–150 °C). The chemical composition of the resulting films is investigated postdeposition using X‐ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry, with fully stoichiometric Al 2 O 3 achieved at deposition temperatures as low as 100 °C. Dielectric measurements confirm outstanding dielectric properties compared to typical thermal ALD layers deposited at much higher temperatures. This low‐temperature deposition performance by considering the MVD reactor design and the “pump‐type” regime of precursor delivery versus the “flow‐type” regime of ALD is rationalized and understood. The results clearly demonstrate that alumina thin films grown with MVD are highly versatile for electronic applications and are of particular relevance and interest for the high‐volume processing of dielectric, passivation, and barrier layers at low temperatures.