Gwan-Hyoung Lee

associate professor

Seoul National University

South Korea

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Gwan-Hyoung Lee is an Associate Professor at Seoul National University in South Korea. His research focuses on advances in 2D semiconductor devices, energy-efficient memristors, and strain engineering in materials like MoS2. He has recently published articles on topics such as monolithic 3D integration and gate dielectrics for 2D electronics. Professor Lee is affiliated with the Institute of Applied Physics, where he explores innovative techniques in materials science.

Articles (20)

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2025

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2022

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2022

Collaborators (1)

Min Hyuk Park

Assistant Professor

Seoul National University

SOUTH KOREA

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Gwan-Hyoung Lee

Research Interests

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About

Articles (20)

Advances and challenges in 2D semiconductor devices for monolithic 3D integration

Interstitial nanofilament pathway reduces energy consumption in memristors

Strain-Mediated Control of Domain Structures in 3R-MoS2 Bilayers Synthesized by Vapor–Liquid–Solid Growth in Chemical Vapor Deposition

Geometrically Confined Strain Engineering of MoS2 via Quasi‐Van Der Waals Recrystallization of Gold Nanopillars

Vertical Stacking of Atomic-Layer-Deposited Oxide Layers via a Fluorinated Graphene Transfer Technique

Advances in Gate Dielectrics for 2D Electronics

Van der Waals epitaxy and beyond for monolithic 3D integration

Focus on Institute of Applied Physics at Seoul National University

Tailoring Interlayer Coupling in Few-Layer MoS2 with Stacking Configuration

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Nucleation and Growth of Monolayer MoS2 at Multisteps of MoO2 Crystals by Sulfurization

Gate-Tunable Electrostatic Friction of Grain Boundary in Chemical-Vapor-Deposited MoS2

Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

Fatigue-Induced Surface Modification of Zr-Based Metallic Glass under Environmental Conditions

Irreversible Conductive Filament Contacts for Passivated van der Waals Heterostructure Devices

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Improved Crystallinity of Graphene Grown on Cu/Ni (111) through Sequential Mobile Hot-Wire Heat Treatment

Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices

Band Structure Engineering of WSe2 Homo‐Junction Interfaces via Thickness Control

Exciton-dominant photoluminescence of MoS2 by a functionalized substrate

Collaborators (1)

Min Hyuk Park

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