Min Hyuk Park

Assistant Professor

Seoul National University

South Korea

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About

Min Hyuk Park is an Assistant Professor at Seoul National University in South Korea. His research interests focus on ferroelectric materials, including Hf0.5Zr0.5O2 thin films and their integration in neuromorphic computing hardware. Recent publications highlight advancements in atomic-layer deposition techniques, the modulation of ferroelectric properties, and the challenges of developing synaptic devices and ferroelectric tunnel junctions.

Articles (22)

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Collaborators (7)

Laura Bégon-Lours

ETH Zürich

SWITZERLAND

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Gwan-Hyoung Lee

associate professor

Seoul National University

SOUTH KOREA

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Ho Won Jang

Professor

Seoul National University

SOUTH KOREA

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Bong Ho Kim

Korea Institute of Ceramic Engineering and Technology

SOUTH KOREA

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Min Hyuk Park

Seoul National University

SOUTH KOREA

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Thomas Mikolajick

Technische Universität Dresden

GERMANY

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Han-Bo-Ram Lee

Professor

Incheon National University

SOUTH KOREA

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Min Hyuk Park

Research Interests

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About

Articles (22)

Atomic-Level Stoichiometry Control of Ferroelectric HfxZryOz Thin Films by Understanding Molecular-Level Chemical Physical Reactions

Vertical Stacking of Atomic-Layer-Deposited Oxide Layers via a Fluorinated Graphene Transfer Technique

Texture modulation of ferroelectric Hf0.5Zr0.5O2 thin films by engineering the polymorphism and texture of tungsten electrodes

Strategies for Reducing Operating Voltage of Ferroelectric Hafnia by Decreasing Coercive Field and Film Thickness

Temperature-Dependent {111}-Texture Transfer to Hf0.5Zr0.5O2 Films from {111}-Textured TiN Electrode and Its Impact on Ferroelectricity

HfO2-based ferroelectric synaptic devices: challenges and engineering solutions

2D materials-based crossbar array for neuromorphic computing hardware

Ferroelectric tunnel junctions: promise, achievements and challenges

Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia

Ferroelectricity of Hf0.5Zr0.5O2 Thin Film Induced at 350°C by Thermally Accelerated Nucleation During Atomic Layer Deposition

Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry

Two-Terminal Neuromorphic Devices for Spiking Neural Networks: Neurons, Synapses, and Array Integration

From Ferroelectric Material Optimization to Neuromorphic Devices

Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications

Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices

A perspective on the physical scaling down of hafnia-based ferroelectrics

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Emerging Fluorite-Structured Antiferroelectrics and Their Semiconductor Applications

Examination of Ferroelectric FET for “Cold” Nonvolatile Memory

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

Neuromorphic devices based on fluorite‐structured ferroelectrics

Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates

Collaborators (7)

Laura Bégon-Lours

Gwan-Hyoung Lee

Ho Won Jang

Bong Ho Kim

Min Hyuk Park

Thomas Mikolajick

Han-Bo-Ram Lee

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