Hidekazu Tsuchida

Central Research Institute of Electric Power Industry

Japan

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Articles (10)

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Collaborators (3)

Yasuto Hijikata

Associate Professor

Saitama Daigaku

JAPAN

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Yuta Masuyama

National Institutes for Quantum and Radiological Science and Technology

JAPAN

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Takeshi Ohshima

Specially Appointed Professor

Tohoku University

JAPAN

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Hidekazu Tsuchida

Research Interests

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Articles (10)

Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

Experimental determination of intrinsic carrier density in 4H-SiC based on electron diffusion current in an npn bipolar junction transistor

Modeling of Stacking Faults in 4H-SiC n-Type Epilayer for TCAD Simulation

Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method

Limited current conduction due to various types of stacking faults in n-type 4H-SiC epilayers

Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations

Carrier lifetime control by intentional boron doping in aluminum doped p-type 4H-SiC epilayers

Mechanical-stressing measurements of formation energy of single Shockley stacking faults in 4H-SiC

Collaborators (3)

Yasuto Hijikata

Yuta Masuyama

Takeshi Ohshima

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