Takeshi Ohshima

Specially Appointed Professor

Tohoku University

Japan

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About

Takeshi Ohshima is a Specially Appointed Professor at Tohoku University in Japan. His research focuses on quantum materials and sensors, particularly in the areas of color centers in nanodiamonds, divacancies in silicon carbide, and radiation-resilient solar cells. Recent contributions include the development of advanced nanosensors and studies on the performance of diamond quantum magnetometers. His work also extends to the investigation of chemical bonds formed by heavy ion irradiation in graphene heterostructures.

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2023

Collaborators (22)

Jawad Ul Hassan

Assoc Professor

Linköping University

SWEDEN

Takeshi Ohshima

Research Interests

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About

Articles (30)

Nitrogen-vacancy centre formation via local femto-second laser annealing of diamond

Performance evaluation of a diamond quantum magnetometer for biomagnetic sensing: A phantom study

Two-media laser threshold magnetometry: A magnetic-field-dependent laser threshold

Hybrid nanosensors of carbon quantum dots and fluorescent nanodiamonds: Ratiometric thermometry and multicolor sensing

Creation of Single Tin-Vacancy Color Centers in Small Nanodiamonds

Radiation-resilient ultra-thin GaAs solar cells on glass transferred by anodic bonding

Comparative study of divacancies in 3C-, 4H-, and 6H-SiC

Cross-Section Prediction Method for Proton Direct Ionization Induced Single Event Upset

Formation of Cl–C Chemical Bonds by High-Energy Heavy Ion Irradiation of KCl/Graphene Heterostructures

Radiation tolerance analysis of space solar cells under increased irradiance conditions

Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride

Multi-species optically addressable spin defects in a van der Waals material

4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays

Space radiation research with heavy ions at HIMAC

Publisher’s Note: “Open-circuit voltage degradation and trap-assisted tunneling in electron and proton-irradiated ultra-thin GaAs solar cells” [J. Appl. Phys. 135, 224505 (2024)]

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Compact and Stable Diamond Quantum Sensors for Wide Applications

Open-circuit voltage degradation and trap-assisted tunneling in electron and proton-irradiated ultra-thin GaAs solar cells

Diamond quantum magnetometer with dc sensitivity of sub-10 pT Hz−1/2 toward measurement of biomagnetic field

Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4 H - and 6 H -SiC

Highly Dispersed 3C Silicon Carbide Nanoparticles with a Polydopamine/Polyglycerol Shell for Versatile Functionalization

Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

Radiation effects in materials

Highly Sensitive Temperature Sensing Using the Silicon Vacancy in Silicon Carbide by Simultaneously Resonated Optically Detected Magnetic Resonance

Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Effects of He ion and electron beam irradiation on a CdTe solar cell dosimeter in a substrate configuration

Voltage Dependence of Single-Event Cross Sections of FinFET SRAMs for Low LET Condition

Detection of Paramagnetic Spins with an Ultrathin van der Waals Quantum Sensor

Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide

Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes

Collaborators (22)

Jawad Ul Hassan

Igor Aharonovich

Lorenzo Malerba

Hiromitsu Kato

Lukas Lindner

Khalid Hattar

Yumi Yoshida

Islay Robertson

Yohei Miyanoiri

Florentin Reiter

Yasuto Hijikata

Brett C. Johnson

Philipp Reineck

Sam Scholten

Jeffrey McCallum

Hidekazu Tsuchida

Alex Healey

Vladislav Bushmakin

Yuta Kainuma

Jean-Philippe Tetienne

Yuta Masuyama

Mehran Kianinia

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