Hiroshi Yano

Associate Professor

University of Tsukuba

Japan

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About

Hiroshi Yano is an Associate Professor at the University of Tsukuba, Japan. His research focuses on the electrical characteristics and failure mechanisms of Silicon Carbide (SiC) MOSFETs, examining aspects such as turn-off and on-resistance, short-circuit capabilities, and phonon-limited mobility. His recent articles delve into comparative studies of surge current capabilities and advancements in MOSFET design, contributing significantly to the field of power electronics.

Articles (13)

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2024

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2024

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2023

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2023

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2023

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2022

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2021

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2021

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2020

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2020

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2020

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2020

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2020

Collaborators (4)

Noriyuki Iwamuro

Professor

University of Tsukuba

JAPAN

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Akiko Ueda

National Institute of Advanced Industrial Science and Technology

JAPAN

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Dai Okamoto

Associate Professor

University of Toyama

JAPAN

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Takeaki Sakurai

Professor

University of Tsukuba

JAPAN

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Hiroshi Yano

Research Interests

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About

Articles (13)

A study on turn-off, and on-resistance and short-circuit capability trade-off characteristics in 1.2 kV SiC MOSFETs

Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs

The effect of biaxial strain on the phonon-limited mobility in 4H-SiC MOSFETs

Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs

Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs

Impact of Negative Gate Bias and Inductive Load on the Single-Pulse Avalanche Capability of 1200-V SiC Trench MOSFETs

Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method

Simple method to estimate the shallow interface trap density near the conduction band edge of MOSFETs using Hall effect measurements

Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal

Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses

Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces

Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

Collaborators (4)

Noriyuki Iwamuro

Akiko Ueda

Dai Okamoto

Takeaki Sakurai

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