Houqiang Fu

Arizona State University

United States

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Articles (21)

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Collaborators (9)

Alexander Balandin

Distinguished Professor

University of California, Los Angeles

UNITED STATES

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Shisong Luo

Rice University

UNITED STATES

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Fariborz Kargar

Assistant Professor

Auburn University

UNITED STATES

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Sergei Rumiantcev

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Robert J. Nemanich

Professor

Arizona State University

UNITED STATES

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Yuji Zhao

UNITED STATES

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Gaudenzio Meneghesso

Full Professor

University of Padua

ITALY

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Richard Wilson

Assistant Professor

University of California, Riverside

UNITED STATES

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Stephen Goodnick

Professor

Arizona State University

UNITED STATES

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Houqiang Fu

Research Interests

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Articles (21)

Instability of On-Resistance in Vertical GaN PIN Diodes Under High-Temperature and Voltage Stress

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

Instability of On-Resistance in Vertical GaN PIN Diodes Under High-Temperature and Voltage Stress

Performance-Tunable MoS2 Homojunction Photodiode Based on Different Built-In Electric Field

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells

V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis

Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes

Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance

Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films

Anisotropic electrical properties of NiO x /β-Ga2O3 p-n heterojunctions on (2 ̅01), (001), and (010) crystal orientations

Microneural Network System Based on MoS2/h-BN/Graphene van der Waals Heterojunction Transistor

Ultrawide bandgap vertical β-(AlxGa1−x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells

Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature

GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications

Collaborators (9)

Alexander Balandin

Shisong Luo

Fariborz Kargar

Sergei Rumiantcev

Robert J. Nemanich

Yuji Zhao

Gaudenzio Meneghesso

Richard Wilson

Stephen Goodnick

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