Yuji Zhao

United States

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Articles (14)

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2025

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2025

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2025

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2022

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2022

Collaborators (13)

Alexander Balandin

Distinguished Professor

University of California, Los Angeles

UNITED STATES

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Shisong Luo

Rice University

UNITED STATES

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Fariborz Kargar

Assistant Professor

Auburn University

UNITED STATES

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Sergei Rumiantcev

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Robert J. Nemanich

Professor

Arizona State University

UNITED STATES

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Robert Vajtai

Research Professor

Rice University

UNITED STATES

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Gaudenzio Meneghesso

Full Professor

University of Padua

ITALY

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Abhijit Biswas

Rice University

UNITED STATES

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Kai Fu

University of Utah

UNITED STATES

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David Smith

Regents' Professor

Arizona State University

UNITED STATES

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Stephen Goodnick

Professor

Arizona State University

UNITED STATES

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Saurabh Vishwakarma

Arizona State University

UNITED STATES

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Houqiang Fu

Arizona State University

UNITED STATES

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Yuji Zhao

Research Interests

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Articles (14)

High Temperature AlGaN/GaN MISHEMT With W/AlON Gate Stack and I max>1 A/mm at 500 ∘C

GaN Schottky‐Gate p‐Field Effect Transistors Based on GaN‐on‐Si Platform Operational at High Temperatures

Electrical and Reliability Study of GaN E-Mode MISHEMTs With Two-Step Etching Gate Recess

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells

V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis

Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes

Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange

Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance

Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells

Vertical <i>β</i>-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer

Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Collaborators (13)

Alexander Balandin

Shisong Luo

Fariborz Kargar

Sergei Rumiantcev

Robert J. Nemanich

Robert Vajtai

Gaudenzio Meneghesso

Abhijit Biswas

Kai Fu

David Smith

Stephen Goodnick

Saurabh Vishwakarma

Houqiang Fu

Make your next move.