Hyeong-U Kim

Assistant Professor

University of Science and Technology (UST)

South Korea

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About

Hyeong-U Kim is an Assistant Professor at the University of Science & Technology (UST) in South Korea. His research focuses on advanced materials and processes, including van der Waals materials, plasma etching, and machine learning applications in semiconductor manufacturing. Recent publications include studies on artificial ferromagnetism, optical synaptic memory, and data-driven analysis for semiconductor processing.

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2025

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2023

Collaborators (3)

Taesung Kim

Professor

Sungkyunkwan University - Natural Sciences Campus

SOUTH KOREA

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Seoung-Ki Lee

Pusan National University

SOUTH KOREA

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Min Sup Choi

Assistant Professor

Chungbuk National University

SOUTH KOREA

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Hyeong-U Kim

Research Interests

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About

Articles (19)

Monolithically‐Integrated van der Waals Synaptic Memory via Bulk Nano‐Crystallization

Machine Learning Based on Digital Image Colorimetry Driven In Situ, Noncontact Plasma Etch Depth Prediction

Artificial Room‐Temperature Ferromagnetism of Bulk van der Waals VSe<sub>2</sub>

Strain‐Assisted Large‐Scale 1T‐MoS<sub>2</sub> Synthesis and its Optical Synaptic Flash Memory Application

Direct monitoring of generated particles in plasma enhanced chemical vapor deposition process using temperature compensating quartz crystal microbalance

Development of industrial-scale L-shaped dielectric barrier discharge reactor for improving capacity retention of graphite anode using plasma pretreatment

Stochastically Broken Inversion Symmetry of Van der Waals Topological Insulator for Nanoscale Physically Unclonable Functions

Electron Release via Internal Polarization Fields for Optimal S‐H Bonding States

Unlocking of Schottky Barrier Near the Junction of MoS2 Heterostructure Under Electrochemical Potential

Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications

Enhancing Si<sub>3</sub>N<sub>4</sub> Selectivity over SiO<sub>2</sub> in Low-RF Power NF<sub>3</sub>–O<sub>2</sub> Reactive Ion Etching: The Effect of NO Surface Reaction

Nanoristors: Highly Uniform, Sub-500-Millivolt, Large-Scale, and Robust Molybdenum Disulfide Nanograined Memristors

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing

Multi-Domain Data Integration for Plasma Diagnostics in Semiconductor Manufacturing Using Tri-CycleGAN

Machine Learning-Based Prediction of Atomic Layer Control for MoS2 via Reactive Ion Etcher

Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

Artificial-Neural-Network-Driven Innovations in Time-Varying Process Diagnosis of Low-K Oxide Deposition

Diagnosing Time-Varying Harmonics in Low-k Oxide Thin Film (SiOF) Deposition by Using HDP CVD

Key Factors in Enhancing Pseudocapacitive Properties of PANI-InO<sub>x</sub> Hybrid Thin Films Prepared by Sequential Infiltration Synthesis

Collaborators (3)

Taesung Kim

Seoung-Ki Lee

Min Sup Choi

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