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Jae-Seong Park

Senior Research Fellow

University College London

United Kingdom

Research Interests

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Professors in United Kingdom

Articles (17)

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2026

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2024

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2024

Collaborators (7)

Chen Chong

University College London

UNITED KINGDOM

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Qiang Li

Principal Research Fellow (Associate Professor)

University of Southampton

UNITED KINGDOM

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Xing Lin

Assistant Professor

Zhejiang University

CHINA

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Huiyun Liu

University College London

UNITED KINGDOM

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Jiajing Yuan

University College London

UNITED KINGDOM

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Ilias Skandalos

University of Southampton

UNITED KINGDOM

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Hui Jia

Senior Research Fellow

University College London

UNITED KINGDOM

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Jae-Seong Park

Research Interests

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Articles (17)

Mid-infrared InAs/InP quantum-dot lasers

Monolithic integration of quantum dot lasers and amplifiers in silicon photonic circuits with high coupling efficiency

InAs/InAlGaAs Quantum Dot Lasers on InP and Si

High‐Temperature Operation of All‐Molecular Beam Epitaxy InAs/GaAs Quantum Dot Lasers on V‐Grooved Si (001)

High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique

Low threshold InAs/InP quantum dot lasers

The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

Low threshold InAs/InP quantum dot lasers on Si

Optimisation of argon plasma pre-treatment for enhanced silicon surface preparation for germanium epitaxy

MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si

MOCVD-grown InAs/InP quantum dot lasers with low threshold current

Quantum dots synthesis within ternary III-V nanowire towards light emitters in quantum photonic circuits: a review

Tannic Acid-Enhanced Cellulose/PEDOT:PSS Films Exhibiting Low Electrical Hysteresis, UV Blocking, and Antibacterial Properties for Wearable Sensing

Indium-flush technique for C-band InAs/InP quantum dots

Emerging near‐infrared luminescent materials for next‐generation broadband optical communications

1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Collaborators (7)

Chen Chong

Qiang Li

Xing Lin

Huiyun Liu

Jiajing Yuan

Ilias Skandalos

Hui Jia

Make your next move.

Jae-Seong Park

Research Interests

Make your next move.

Explore related searches

Articles (17)

Mid-infrared InAs/InP quantum-dot lasers

Monolithic integration of quantum dot lasers and amplifiers in silicon photonic circuits with high coupling efficiency

InAs/InAlGaAs Quantum Dot Lasers on InP and Si

High‐Temperature Operation of All‐Molecular Beam Epitaxy InAs/GaAs Quantum Dot Lasers on V‐Grooved Si (001)

High operating temperature (&gt; 200 °C) InAs/GaAs quantum-dot laser with co-doping technique

Low threshold InAs/InP quantum dot lasers

The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

Low threshold InAs/InP quantum dot lasers on Si

Optimisation of argon plasma pre-treatment for enhanced silicon surface preparation for germanium epitaxy

MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si

MOCVD-grown InAs/InP quantum dot lasers with low threshold current

Quantum dots synthesis within ternary III-V nanowire towards light emitters in quantum photonic circuits: a review

Tannic Acid-Enhanced Cellulose/PEDOT:PSS Films Exhibiting Low Electrical Hysteresis, UV Blocking, and Antibacterial Properties for Wearable Sensing

Indium-flush technique for C-band InAs/InP quantum dots

Emerging near‐infrared luminescent materials for next‐generation broadband optical communications

1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Collaborators (7)

Chen Chong

Qiang Li

Xing Lin

Huiyun Liu

Jiajing Yuan

Ilias Skandalos

Hui Jia

Make your next move.

High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique