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Hui Jia

Senior Research Fellow

University College London

United Kingdom

Research Interests

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Professors in United Kingdom Professors in Condensed Matter Physics Condensed Matter Physics professors in United Kingdom

Articles (18)

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2026

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2026

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2025

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2025

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2024

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2024

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2024

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2024

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2023

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2023

Collaborators (10)

Jae-Seong Park

Senior Research Fellow

University College London

UNITED KINGDOM

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Siming Chen

Proleptic Lecturer

University College London

UNITED KINGDOM

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Chen Chong

University College London

UNITED KINGDOM

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Qiang Li

Principal Research Fellow (Associate Professor)

University of Southampton

UNITED KINGDOM

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Thierry Baron

CNRS en Alpes

FRANCE

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Huiyun Liu

University College London

UNITED KINGDOM

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Michael Pepper

University College London

UNITED KINGDOM

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Jiajing Yuan

University College London

UNITED KINGDOM

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Stuart Holmes

Lecturer in Electronic Engineering

University College London

UNITED KINGDOM

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Alwyn Seeds

University College London

UNITED KINGDOM

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Hui Jia

Research Interests

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Articles (18)

Mid-infrared InAs/InP quantum-dot lasers

InAs/InAlGaAs Quantum Dot Lasers on InP and Si

Design of high-speed Ge/GaAs avalanche photodiodes for next-generation photonic integration

Modeling threading dislocation density evolution in Ge/Si during cyclic annealing

High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique

The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

GaAs Growth on Ge‐Buffered Discontinuous (111)‐Faceted V‐Groove Silicon Substrates

Optimisation of argon plasma pre-treatment for enhanced silicon surface preparation for germanium epitaxy

MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si

Ge-rich homogenous GeSi alloying induced by Si–Ge interdiffusion under high temperature thermal cyclic annealing

C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth

Antiphase boundary-free III–V materials epitaxially grown on on-axis silicon (001) substrates by ultra-thin silicon buffer

MBE growth of Ge1−x Sn x devices with intrinsic disorder

Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon

Indium-flush technique for C-band InAs/InP quantum dots

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

Collaborators (10)

Jae-Seong Park

Siming Chen

Chen Chong

Qiang Li

Thierry Baron

Huiyun Liu

Michael Pepper

Jiajing Yuan

Stuart Holmes

Alwyn Seeds

Make your next move.

Hui Jia

Research Interests

Make your next move.

Explore related searches

Articles (18)

Mid-infrared InAs/InP quantum-dot lasers

InAs/InAlGaAs Quantum Dot Lasers on InP and Si

Design of high-speed Ge/GaAs avalanche photodiodes for next-generation photonic integration

Modeling threading dislocation density evolution in Ge/Si during cyclic annealing

High operating temperature (&gt; 200 °C) InAs/GaAs quantum-dot laser with co-doping technique

The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

GaAs Growth on Ge‐Buffered Discontinuous (111)‐Faceted V‐Groove Silicon Substrates

Optimisation of argon plasma pre-treatment for enhanced silicon surface preparation for germanium epitaxy

MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si

Ge-rich homogenous GeSi alloying induced by Si–Ge interdiffusion under high temperature thermal cyclic annealing

C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth

Antiphase boundary-free III–V materials epitaxially grown on on-axis silicon (001) substrates by ultra-thin silicon buffer

MBE growth of Ge1−x Sn x devices with intrinsic disorder

Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon

Indium-flush technique for C-band InAs/InP quantum dots

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

Collaborators (10)

Jae-Seong Park

Siming Chen

Chen Chong

Qiang Li

Thierry Baron

Huiyun Liu

Michael Pepper

Jiajing Yuan

Stuart Holmes

Alwyn Seeds

Make your next move.

High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique