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James C. M. Hwang

Cornell University

United States

Research Interests

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Articles (21)

Collaborators (4)

Yevgeny Berdichevsky

Lehigh University

UNITED STATES

Debdeep Jena

Cornell University

UNITED STATES

Ved Gund

Assistant Professor

Wesleyan University

UNITED STATES

Marco Farina

Marche Polytechnic University

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James C. M. Hwang

Research Interests

Explore related searches

Articles (21)

Collaborators (4)

Yevgeny Berdichevsky

Debdeep Jena

Ved Gund

Marco Farina

Make your next move.

James C. M. Hwang

Research Interests

Explore related searches

Articles (21)

Analysis of Multiline Calibration Algorithms for Various Transmission Line Types Up to 220 GHz

Calibration of Scanning Microwave Microscopy via Substrate-Referenced Machine Learning

Generalized Thru-Reflect-Line Calibration for 1-220-GHz Single-Sweep Ultra-Wideband On-Wafer Measurement

Comparison of Microstrip, Coplanar, and SIW Interconnects on the Same 50-µm-thick GaAs Chip

Millimeter-Wave Permittivity of a 93-mm-Diameter Single-Crystal AlN Wafer

On-wafer S-parameter Characterization of a D-band SIW Power Divider using Two-Port VNA

Scanning Microwave Microscopy of Polarization Domain Boundaries in 2D SnSe

Microwave and millimeter-wave permittivities of single-crystal AlN, including thickness and temperature dependence

Low-loss D-band Power Divider using SiC-based SIWs

Reproducible Permittivity Measurement Above 110 GHz of Ultra-low-loss High-purity Semi-insulating 4H-SiC 2-inch Wafers

Device for detection of activity-dependent changes in neural spheroids at MHz and GHz frequencies

High Power Characterization of SIW-based D-band Traveling Wave Amplifiers

An ultra-compact D-band SIW filter with multi-function transitions to coplanar input/output

Exploring the Potential of Semiconductors at Millimeter-Wave Frequency: From Permittivities to Applications

Label-free differentiation of living <i>versus</i> dead single yeast cells using broadband electrical impedance spectroscopy

AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency &gt;130 GHz

Characterization of in-plane polarization domains in 2D SnSe by scanning microwave microscopy

Ultra-wideband multi-line calibration by microstrip and coplanar impedance standards on the same GaAs chip

A D-Band 24-dBm MMIC Amplifier by Innovative Power Combining of GaN HEMTs in a SiC SIW

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Quantitative Scanning Microwave Microscopy for Transfer Characteristics of GaN High-Electron-Mobility Transistors

Collaborators (4)

Yevgeny Berdichevsky

Debdeep Jena

Ved Gund

Marco Farina

Make your next move.

AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz